We report results of our experimental and theoretical studies on the Au concentration profile
of Cu3Au (111) during oxidation by a hyperthermal O2 molecular beam at room …

The effect of ion irradiation on magnetic domain wall motion (DWM) in a perpendicularly
magnetized Co/Ni multilayered film was investigated. The DWM in the Co/Ni multilayered …

The resistance random access memory (RRAM™) device, with its electrically induced
nanoscale resistive switching capacity, has attracted considerable attention as a future …

Recently, the role of resistance random access memory (RRAM) is becoming extremely
important in the development of nonvolatile memories. RRAM works by changing the …

Titanium and its alloy components are one of the most important technological materials,
which has found extensive application in various industries. However, surface defects play a …

NO oxidation reaction on the Pt cluster supported on γ-Al 2 O 3 (111) surface is investigated
using the climbing image nudged elastic band (CI-NEB) calculation based on the density …

The role of Resistance Random Access Memory (RRAM) is recently becoming extremely
important in the field of developing non-volatile memory devices. The foreseen relevance of …

Hydrogen fluoride molecule is a candidate used for etching metal oxide surface due to its
strong corrosive qualities. However, the etching phenomenon is not well understood at the …

We entered the 21st Century witnessing several remarkable progress in Science and
Technology. Novel materials and devices once considered stuffs of science fiction are, one …

The present disclosure relates to a passivating contact that includes a dielectric layer
constructed of a first material, an intervening layer constructed of a second material, and a …