AlGaN-based materials own direct transition energy bands and wide bandgap and thus can
be used in high-efficiency ultraviolet (UV) emitters and detectors. Over the past two decades …

This chapter provides a brief introduction to group III-nitride ultraviolet light emitting diode
(LED) technologies and an overview of a number of key application areas for UV-LEDs. It …

We overview recent progress in growth aspects of group III-nitride heterostructures for deep
ultraviolet (DUV) light-emitting diodes (LEDs), with particular emphasis on the growth …

An epitaxial lift‐off (ELO) process for GaN materials has been demonstrated using bandgap‐
selective photoenhanced wet etching of an InGaN release layer. This process has been …

Si is the most common dopant in (Al) GaN based devices acting as a donor. It has been
observed that Si induces tensile strain in (Al) GaN films, which leads to an increasing …

In this study, we report different SiH 4 flow condition effects on crystal, surface, optical, and
electrical characteristics of heteroepitaxial Metal-Organic Vapor Phase Epitaxy (MOVPE) …

Bandgap engineering of semiconductor nanostructures is of significant importance either for
the optical property tailoring or for the integration of functional optoelectronic devices. Here …

High-efficiency AlGaN-based 355 nm UV light-emitting diodes (LEDs) grown on low-
dislocation-density AlGaN/sapphire templates are reported. Flip-chip-mounted mesa LEDs …

Threading dislocations (TDs) can be reduced by in-situ deposition of intermediate SiN x sub-
monolayers in group III-nitride heterostructures and their ternary alloys. Here we observe …

В книге рассмотрены теоретические и практические аспекты МОС-гидридной
эпитаксии (МОСГЭ)–одного из наиболее гибких и производительных современных …