Synaptic devices based neuromorphic computing applications in artificial intelligence
Synaptic devices, including synaptic memristor and synaptic transistor, are emerging
nanoelectronic devices, which are expected to subvert traditional data storage and …
nanoelectronic devices, which are expected to subvert traditional data storage and …
Impact of electrolyte density on synaptic characteristics of oxygen-based ionic synaptic transistor
An oxygen-based ionic synaptic transistor (O-IST) is a promising synaptic element for
neuromorphic computing. In this study, we demonstrated that the density of the electrolyte …
neuromorphic computing. In this study, we demonstrated that the density of the electrolyte …
Pr0.7Ca0.3MnO3-Based Three-Terminal Synapse for Neuromorphic Computing
In this letter, we report an all-solid-state Pr0. 7 Ca0. 3MnO3 (PCMO)-based three-terminal
synapse device for neuromorphic computing. In this device structure, PCMO channel …
synapse device for neuromorphic computing. In this device structure, PCMO channel …
Improved Switching Uniformity of SCLC-RRAM Using the Vertically Formed Nanoscale 2DEG Electrode and Control of Oxygen Vacancy Distribution
In recent years, many studies have focused on addressing the switching variability of
filamentary switching resistive random access memory (F-RRAM). This problem persists …
filamentary switching resistive random access memory (F-RRAM). This problem persists …
Accurate prediction of migration barrier of oxygen vacancy in and : Explaining experimental results with density functional theory
Resistive-switching-based memory is a popular research area for majorly neuromorphic,
nonvolatile memory design and in-memory computing. Pr 1− x Ca x MnO 3 [PCMO (x)] is …
nonvolatile memory design and in-memory computing. Pr 1− x Ca x MnO 3 [PCMO (x)] is …
Effect of Oxygen Vacancy on the Conduction Modulation Linearity and Classification Accuracy of Pr0.7Ca0.3MnO3 Memristor
Y Pyo, JU Woo, HG Hwang, S Nahm, J Jeong - Nanomaterials, 2021 - mdpi.com
An amorphous Pr0. 7Ca0. 3MnO3 (PCMO) film was grown on a TiN/SiO2/Si (TiN–Si)
substrate at 300° C and at an oxygen pressure (OP) of 100 mTorr. This PCMO memristor …
substrate at 300° C and at an oxygen pressure (OP) of 100 mTorr. This PCMO memristor …
Enhanced linear and symmetric synaptic weight update characteristics in a Pt/p-LiCoO x/p-NiO/Pt memristor through interface energy barrier modulation by Li ion …
Artificial synaptic devices have been extensively investigated for neuromorphic computing
systems, which require synaptic behaviors mimicking the biological ones. In particular, a …
systems, which require synaptic behaviors mimicking the biological ones. In particular, a …
An investigation on low operating voltage induced self-rectifying multilevel resistive switching in AgNbO3
This study presents a resistive random-access memory (RRAM) based on silver niobate
(AgNbO 3) perovskite films prepared via sputtering for the first time. The device exhibits a …
(AgNbO 3) perovskite films prepared via sputtering for the first time. The device exhibits a …
Nanoscale Side-Contact Enabled Three Terminal Pr0.7Ca0.3MnO3 Resistive Random Access Memory for In-Memory Computing
S Lashkare, S Subramoney… - IEEE Electron Device …, 2020 - ieeexplore.ieee.org
Resistive random-access memory (RRAM) devices that can execute logic are promising for
in-memory computing. In state-of-the-art, a complementary resistive switch (CRS) bit-cell of …
in-memory computing. In state-of-the-art, a complementary resistive switch (CRS) bit-cell of …
Bipolar Resistive Switching in Lanthanum Titanium Oxide and an Increased On/Off Ratio Using an Oxygen-Deficient ZnO Interlayer
The present study pioneered an oxygen migration-driven metal to insulator transition Mott
memory, a new type of nonvolatile memory using lanthanum titanium oxide (LTO). We first …
memory, a new type of nonvolatile memory using lanthanum titanium oxide (LTO). We first …