Lattice dynamics and carrier recombination in GaAs/GaAsBi nanowires
GaAsBi nanowires represent a novel and promising material platform for future nano-
photonics. However, the growth of high-quality GaAsBi nanowires and GaAsBi alloy is still a …
photonics. However, the growth of high-quality GaAsBi nanowires and GaAsBi alloy is still a …
Analysis of GaAsBi growth regimes in high resolution with respect to As/Ga ratio using stationary MBE growth
J Puustinen, J Hilska, M Guina - Journal of Crystal Growth, 2019 - Elsevier
The control of Bi incorporation and material properties in III-V-Bi alloys has proved
challenging due to their high sensitivity to the epitaxial growth parameters. Here, we present …
challenging due to their high sensitivity to the epitaxial growth parameters. Here, we present …
[HTML][HTML] Polarization dependent photoluminescence and optical anisotropy in CuPtB-ordered dilute GaAs1–xBix alloys
T Paulauskas, B Čechavičius, V Karpus… - Journal of Applied …, 2020 - pubs.aip.org
The GaAs 1–x Bi x semiconductor alloy allows one to achieve large bandgap reduction and
enhanced spin–orbit splitting energy at dilute Bi quantities. The bismide is currently being …
enhanced spin–orbit splitting energy at dilute Bi quantities. The bismide is currently being …
The effects of growth interruptions in the GaAsBi/InAs/GaAs quantum dots: The emergence of three-phase nanoparticles
The study investigated the impact of introducing bismuth into the GaAs capping layer (CL)
on InAs quantum dots (QDs) to enhance their QD properties. Three different time …
on InAs quantum dots (QDs) to enhance their QD properties. Three different time …
[HTML][HTML] Detection of BiGa hetero-antisites at Ga (As, Bi)/(Al, Ga) As interfaces
In this work, we show how diffraction-based chemically sensitive dark-field transmission
electron microscopy (DFTEM) reveals the presence of Bi hetero-antisites (Bi Ga) at the …
electron microscopy (DFTEM) reveals the presence of Bi hetero-antisites (Bi Ga) at the …
Modeling of the Growth Mechanisms of GaAsBi and GaAs Nanowires
S Blel, C Bilel - Journal of Electronic Materials, 2021 - Springer
In this paper, we theoretically study the controlled growth mechanisms of planar GaAsBi and
GaAs nanowires (NWs) on vicinal substrates. The method used in the present modeling …
GaAs nanowires (NWs) on vicinal substrates. The method used in the present modeling …
Impact of Bi incorporation on the evolution of microstructure during growth of low-temperature GaAs: Bi/Ga (As, Bi) layers
Complex morphology is observed in the GaAs: Bi cap layer of Ga (As, Bi) films grown on
GaAs (001) substrates by low-temperature (LT) molecular beam epitaxy (MBE). The …
GaAs (001) substrates by low-temperature (LT) molecular beam epitaxy (MBE). The …
Au-catalyzed lateral Ga (In) AsP nanostructures grown in a quasi-closed cell
AS Vlasov, LB Karlina, BY Ber, NA Bert… - Materials Today …, 2022 - Elsevier
A new method for growth of Au-catalyzed lateral Ga (In) AsP nanostructures in a quasi-
closed volume from a vapor source under semi-equilibrium conditions has been studied …
closed volume from a vapor source under semi-equilibrium conditions has been studied …
Modeling of the Growth Mechanisms of GaAsBi and GaAs Nanowires
B Sonia, C Bilel - Journal of Electronic Materials, 2021 - search.proquest.com
In this paper, we theoretically study the controlled growth mechanisms of planar GaAsBi and
GaAs nanowires (NWs) on vicinal substrates. The method used in the present modeling …
GaAs nanowires (NWs) on vicinal substrates. The method used in the present modeling …
[PDF][PDF] Polarization dependent photoluminescence and optical anisotropy in CuPt
T Paulauskas, B Čechavičius, V Karpus, L Jočionis… - 2020 - researchgate.net
The GaAs1–xBix semiconductor alloy allows one to achieve large bandgap reduction and
enhanced spin–orbit splitting energy at dilute Bi quantities. The bismide is currently being …
enhanced spin–orbit splitting energy at dilute Bi quantities. The bismide is currently being …