A review of thermal processing in the subsecond range: semiconductors and beyond

L Rebohle, S Prucnal, W Skorupa - Semiconductor Science and …, 2016 - iopscience.iop.org
Thermal processing in the subsecond range comprises modern, non-equilibrium annealing
techniques which allow various material modifications at the surface without affecting the …

Intense pulsed light processing for photovoltaic manufacturing

T Druffel, R Dharmadasa, BW Lavery… - Solar Energy Materials …, 2018 - Elsevier
The solar manufacturing industry continues to expand and become a key source of energy
as manufacturing costs have decreased. This has led to a rapid growth in revenue and a …

Unveiling the Potential of Redox Chemistry to Form Size-Tunable, High-Index Silicon Particles

MA Parker, S Khaddad, N Fares, A Ghoridi… - Chemistry of …, 2024 - ACS Publications
Silicon particles of intermediate sizes (75–200 nm) scatter visible wavelengths, making them
promising candidates for optical devices. The solution synthesis of silicon particles in this …

Producing oxide free silicon nanocrystals–A novel & benign approach

MA Makhdoom, V Sgobba, IA Channa, N Ghewins - Optik, 2021 - Elsevier
A novel method of producing silicon nanocrystals (Si-NCs) having an indispensable oxide
free surface is described. Construction of a cost-effective, robust & safe chemical laboratory …

Ultrasonic spray coating and flash lamp annealing of silicon nanoparticle dispersions for silicon thin film formation

B Büchter, F Seidel, R Fritzsche, I Toader… - Journal of Materials …, 2014 - Springer
Ultrasonic spray coating is reported as a deposition method for thin silicon films using a
mixture of silicon nanoparticles and organosilicon compounds. The as-deposited films were …

Heavily phosphorus-doped silicon nanoparticles as intermediate layer in solar cell based on IFO/p-Si heterojunction

AB Chebotareva, GG Untila, TN Kost - Solar Energy, 2015 - Elsevier
The goal of this work is to investigate the effect of heavily phosphorus-doped silicon
nanoparticles (NP-n+) Si introduced between the p-type silicon substrate and indium …

[HTML][HTML] Untersuchungen zum Einsatz des ms-Blitzlampentemperns bei der Atomlagenabscheidung von dünnen Schichten und für die Rekristallisation von …

T Henke - 2021 - tud.qucosa.de
Abstract (DE) Die Fertigung zukünftiger integrierter Schaltkreise und von Produkten des
Bereichs Konsumerelektronik erfordert die Anwendung von Verfahren mit reduzierter …

[引用][C] Untersuchungen zum Einsatz des ms-Blitzlampentemperns bei der Atomlagenabscheidung von dünnen Schichten und für die Rekristallisation von …

T Henke - 2020 - Dissertation, Dresden, Technische …

[引用][C] Thermische Umwandlung dünner Silizium-Schichten

A Riecke - 2017 - Dissertation, Erlangen, Friedrich …