The group‐III sesquioxides possess material properties that render them interesting for
applications such as high‐power rectifiers and transistors, solar‐blind UV detectors and inter …

Gallium oxide (Ga2O3) materials can be fabricated via various methods or processes. It is
often mentioned that it possesses different polymorphs (α-, β-, γ-, δ-and ε-Ga2O3) and …

Hollow nanotubes comprised of In2O3 and Ga2O3 have been successfully synthesized for
the first time via sol–gel chemistry and porous alumina templating thereby providing a new …

In this work, we discuss the development of combinatorial deposition and analysis tools for
the investigation of and the optimization of transparent conducting oxides. Library deposition …

Tin (Sn)-doped beta phase gallium oxide (β-Ga 2 O 3) nanostructures at different Sn
concentrations (0 to 7.3 at%) are synthesized using a facile hydrothermal method. The Sn …

An effect of alloying of the monoclinic β-Ga 2 O 3 with Al 2 O 3 and In 2 O 3 on the
photoluminescent, thermoluminescent and persistent luminescent properties of Cr 3+ ions …

A great deal of efforts have been dedicated to reduce carrier recombination problem in β-Ga
2 O 3 using strategies, such as doping, compositing, and interfacing with different materials …

The pseudo-binary In 2 O 3–SnO 2 phase diagram has been determined in the range of
1000–1650° C using electron probe microanalysis (EPMA) and x-ray diffraction (XRD) …

Subsolidus phase relationships in the Ga2O3 SnO2 ZnO system were determined at
1250° C using solid state synthesis and X-ray powder diffraction. The two spinels, Zn2SnO4 …

Combined solid state phase diagram studies and physical property measurements of the
various n-type transparent conducting oxide (TCO) phases in the CdO-In2O3-SnO2 system …