The main challenge in the commercialization of the RF-MEMS switches is their reliability,
related to both the electrical and mechanical domains. The development of test standards …

The movement or migration of charges in dielectric materials like silicon oxide, silicon nitride
and glass, is recognized as one of the most significant causes of drift instability of MEMS …

Bipolar control-voltage waveforms, under which the control voltage alternates between
positive and negative after each cycle, have been proposed to mitigate dielectric charging in …

Bipolar control-voltage waveforms have been proposed to mitigate dielectric charging in RF
MEMS capacitive switches. In this work, for the first time, dielectric charging under bipolar …

The paper investigates the dependence of charging process on the dielectric charging of
radiation induced defects in Si3N4 and SiO2 dielectric films, which are used in RF-MEMS …

The paper analyze the direct relation between the dielectric polarization mechanisms and
the radio frequency microelectromechanical system capacitive switches performance. The …

In this work, we investigate the charging and reliability of interlayer dielectric materials that
are used in the fabrication process of advanced RF-MEMS switches. In particular, the charge …

The dielectric charging constitutes a major problem that still inhibits the commercial
application of RF MEMS capacitive switches. The effect arises from the presence of the …

This paper discusses the mechanisms responsible for charging of plasma enhanced
chemical vapor deposition (PECVD) silicon nitride films used in the fabrication of RF …

A capacitance-voltage (CV) model is developed for RF microelectromechanical systems
(MEMS) switches at upstate and downstate. The transient capacitance response of the RF …