[图书][B] Physics of radio-frequency plasmas

P Chabert, N Braithwaite - 2011 - books.google.com
Low-temperature radio frequency plasmas are essential in various sectors of advanced
technology, from micro-engineering to spacecraft propulsion systems and efficient sources …

6. Molecular spectroscopy techniques applied for processing plasma diagnostics

N Sadeghi - プラズマ・核融合学会誌, 2004 - jlc.jst.go.jp
Optical diagnostics are between the most commonly used tools for the characterization of
plasmas and for the better understanding of physical and chemical processes controlling …

Fabrication of photonic wire and crystal circuits in silicon-on-insulator using 193-nm optical lithography

SK Selvaraja, P Jaenen, W Bogaerts… - Journal of lightwave …, 2009 - opg.optica.org
High-index contrast silicon-on-insulator technology enables wavelength-scale compact
photonic circuits. We report fabrication of photonic circuits in silicon-on-insulator using …

Nanoscale patterning of microtextured surfaces to control superhydrophobic robustness

TG Cha, JW Yi, MW Moon, KR Lee, HY Kim - Langmuir, 2010 - ACS Publications
Most naturally existing superhydrophobic surfaces have a dual roughness structure where
the entire microtextured area is covered with nanoscale roughness. Despite numerous …

Radical surface interactions in industrial silicon plasma etch reactors

G Cunge, D Vempaire, R Ramos… - Plasma Sources …, 2010 - iopscience.iop.org
Silicon etching in Cl 2-based plasmas is an important step for the fabrication of IC circuits but
the plasma surface interactions involved in this process remain poorly understood. Based on …

New chamber walls conditioning and cleaning strategies to improve the stability of plasma processes

G Cunge, B Pelissier, O Joubert… - … Sources Science and …, 2005 - iopscience.iop.org
One major challenge in plasma etching processes for integrated circuit fabrication is to
achieve a good wafer-to-wafer repeatability. This requires a perfect control of the plasma …

Chromium Silicon Multiple Bonds: The Chemistry of Terminal N‐Heterocyclic‐Carbene‐Stabilized Halosilylidyne Ligands

AC Filippou, O Chernov… - Chemistry–A European …, 2011 - Wiley Online Library
An efficient method for the synthesis of the first N‐heterocyclic carbene (NHC)‐stabilized
halosilylidyne complexes is reported that starts from SiBr4. In the first step, SiBr4 was treated …

Reducing damage to Si substrates during gate etching processes by synchronous plasma pulsing

C Petit-Etienne, M Darnon, L Vallier… - Journal of Vacuum …, 2010 - pubs.aip.org
Plasma oxidation of the c-Si substrate through a very thin gate oxide layer can be observed
during HBr/O 2/Ar based plasma overetch steps of gate etch processes. This phenomenon …

Surface roughness generated by plasma etching processes of silicon

M Martin, G Cunge - Journal of Vacuum Science & Technology B …, 2008 - pubs.aip.org
The authors used atomic force microscopy to analyze the roughness generated on c-Si
(100) surfaces when etched in high-density plasmas over a wide range of conditions …

Thermal stability of superhydrophobic, nanostructured surfaces

SC Cha, EK Her, TJ Ko, SJ Kim, H Roh, KR Lee… - Journal of colloid and …, 2013 - Elsevier
The thermal stability of superhydrophobic, nanostructured surfaces after thermal annealing
was explored. Flat surfaces coated with hydrophobic diamond-like carbon (DLC) via plasma …