Room temperature energy-efficient spin-orbit torque switching in two-dimensional van der Waals Fe3GeTe2 induced by topological insulators

H Wang, H Wu, J Zhang, Y Liu, D Chen… - Nature …, 2023 - nature.com
Abstract Two-dimensional (2D) ferromagnetic materials with unique magnetic properties
have great potential for next-generation spintronic devices with high flexibility, easy …

Integrated memory devices based on 2D materials

F Xue, C Zhang, Y Ma, Y Wen, X He, B Yu… - Advanced …, 2022 - Wiley Online Library
With the advent of the Internet of Things and big data, massive data must be rapidly
processed and stored within a short timeframe. This imposes stringent requirements on …

Efficient current-induced spin torques and field-free magnetization switching in a room-temperature van der Waals magnet

C Yun, H Guo, Z Lin, L Peng, Z Liang, M Meng… - Science …, 2023 - science.org
The discovery of magnetism in van der Waals (vdW) materials has established unique
building blocks for the research of emergent spintronic phenomena. In particular, owing to …

Large room-temperature magnetoresistance in van der Waals ferromagnet/semiconductor junctions

W Zhu, S Xie, H Lin, G Zhang, H Wu, T Hu… - Chinese Physics …, 2022 - iopscience.iop.org
A magnetic tunnel junction (MTJ) is the core component in memory technologies, such as
the magnetic random-access memory, magnetic sensors and programmable logic devices …

Room‐temperature van der Waals ferromagnet switching by spin‐orbit torques

W Li, W Zhu, G Zhang, H Wu, S Zhu, R Li… - Advanced …, 2023 - Wiley Online Library
The emerging wide varieties of the van der Waals (vdW) magnets with atomically thin and
smooth interfaces hold great promise for next‐generation spintronic devices. However, due …

Control over Berry Curvature Dipole with Electric Field in

XG Ye, H Liu, PF Zhu, WZ Xu, SA Yang, N Shang… - Physical Review Letters, 2023 - APS
Berry curvature dipole plays an important role in various nonlinear quantum phenomena.
However, the maximum symmetry allowed for nonzero Berry curvature dipole in the …

Two-dimensional magnetic materials for spintronic devices

M Mi, H Xiao, L Yu, Y Zhang, Y Wang, Q Cao… - Materials Today Nano, 2023 - Elsevier
Spintronics is a promising technology to develop high-speed, high-density, low-power, and
nonvolatile memory and logic devices, and thus has attracted tremendous attention …

[HTML][HTML] Room-temperature orbit-transfer torque enabling van der Waals magnetoresistive memories

ZC Pan, D Li, XG Ye, Z Chen, ZH Chen, AQ Wang… - Science Bulletin, 2023 - Elsevier
The non-volatile magnetoresistive random access memory (MRAM) is believed to facilitate
emerging applications, such as in-memory computing, neuromorphic computing and …

Multi-functional switch effect in interlocking molecular rotators-on-graphene systems using electric fields

X Li, F Qi, R Zhao, Z Qiu, Y Li, M Long… - Journal of Materials …, 2022 - pubs.rsc.org
One approach to design electronic devices is to use molecules whose configuration can be
actively modified to control their electrical conductivity. A recent theoretical study provides a …

Magnetic anisotropy, exchange coupling and Dzyaloshinskii—Moriya interaction of two-dimensional magnets

Q Cui, L Wang, Y Zhu, J Liang, H Yang - Frontiers of Physics, 2023 - Springer
Abstract The two-dimensional (2D) magnets provide novel opportunities for understanding
magnetism and investigating spin related phenomena in several atomic thickness. Multiple …