Bifunctional resistive switching behavior in an organolead halide perovskite based Ag/CH 3 NH 3 PbI 3− x Cl x/FTO structure
Organolead halide perovskite materials open up a new era for developing low-cost and high
efficiency solar cells due to their simple and inexpensive fabrication process, superior light …
efficiency solar cells due to their simple and inexpensive fabrication process, superior light …
Interfacial triggering of conductive filament growth in organic flexible memristor for high reliability and uniformity
We demonstrate the physical pictures of the localization of the conductive filaments (CFs)
growth in flexible electrochemical metallization (ECM) memristors through an interfacial …
growth in flexible electrochemical metallization (ECM) memristors through an interfacial …
Organic flexible memristor with reduced operating voltage and high stability by interfacial control of conductive filament growth
Herein, the underlying mechanisms for the growth of conductive filaments (CFs) at a metal–
polymer electrolyte interface through ion migration in organic electrochemical metallization …
polymer electrolyte interface through ion migration in organic electrochemical metallization …
Enhanced resistive switching characteristics of conductive bridging memory device by a Co–Cu alloy electrode
One of the main challenges in the development of conductive bridging random access
memory (CBRAM) is the large stochastic nature of ion movement that ultimately leads to …
memory (CBRAM) is the large stochastic nature of ion movement that ultimately leads to …
[HTML][HTML] First integration of Ni barrier layer for enhanced threshold switching characteristics in Ag/HfO2-based TS device
Abstract Utilizing Ag/HfO 2 with nickel (Ni) as a barrier layer, a novel threshold switching
(TS) device is devised to overcome challenges such as low reliability, high threshold …
(TS) device is devised to overcome challenges such as low reliability, high threshold …
One-step preparation of graphene oxide–poly (3, 4 ethylenedioxythiophene) composite films for nonvolatile rewritable memory devices
Y Li, X Ni - RSC advances, 2016 - pubs.rsc.org
Nonvolatile rewritable memory devices were fabricated from the composite films of poly (3, 4-
ethylenedioxythiophene)(PEDOT) grown on a graphene oxide (GO) substrate …
ethylenedioxythiophene)(PEDOT) grown on a graphene oxide (GO) substrate …
Improved resistive switching properties in SiOx-based resistive random-access memory cell with Ti buffer layer
In this work, low-power bipolar resistive switching is demonstrated in a fully complementary
metal–oxide–semiconductor-compatible Ni/Ti/SiO x/p+-Si resistive random-access memory …
metal–oxide–semiconductor-compatible Ni/Ti/SiO x/p+-Si resistive random-access memory …
[图书][B] Fractal properties and applications of dendritic filaments in programmable metallization cells
W Yu - 2015 - search.proquest.com
Programmable metallization cell (PMC) technology employs the mechanisms of metal ion
transport in solid electrolytes (SE) and electrochemical redox reactions in order to form …
transport in solid electrolytes (SE) and electrochemical redox reactions in order to form …
Stabilization of Ni conductive filaments using NH 3 plasma treatment for electrochemical metallization memory
In this study, NH3 plasma treatment was utilized to enhance the resistive switching (RS)
properties. Au/Ni/TaOx/NiSi and Au/Ni/NH3 plasma-treated TaOx/NiSi resistance RAM …
properties. Au/Ni/TaOx/NiSi and Au/Ni/NH3 plasma-treated TaOx/NiSi resistance RAM …