Advances in ultrasensitive piezoresistive sensors: from conventional to flexible and stretchable applications
The piezoresistive effect has been a dominant mechanical sensing principle that has been
widely employed in a range of sensing applications. This transducing concept still receives …
widely employed in a range of sensing applications. This transducing concept still receives …
Current trends in planar Hall effect sensors: evolution, optimization, and applications
The advantages of planar Hall effect (PHE) sensors—their thermal stability, very low
detection limits, and high sensitivities—have supported a wide range of advanced …
detection limits, and high sensitivities—have supported a wide range of advanced …
[HTML][HTML] Highly sensitive and robust 3C-SiC/Si pressure sensor with stress amplification structure
SiC based pressure sensors show tremendous promise for harsh environment applications
thanks to their excellent mechanical, electrical, thermal, and chemical properties. This paper …
thanks to their excellent mechanical, electrical, thermal, and chemical properties. This paper …
Wide-band-gap semiconductors for biointegrated electronics: Recent advances and future directions
Wearable and implantable bioelectronics have experienced remarkable progress over the
last decades. Bioelectronic devices provide seamless integration between electronics and …
last decades. Bioelectronic devices provide seamless integration between electronics and …
Ultra-sensitive self-powered position-sensitive detector based on horizontally-aligned double 3C-SiC/Si heterostructures
Position-sensitive detectors (PSDs) utilising the lateral photovoltaic effect (LPE) are actively
being explored to achieve precise optical alignments for applications such as surface …
being explored to achieve precise optical alignments for applications such as surface …
Robust and fast response solar-blind UV photodetectors based on the transferable 4H-SiC free-standing nanowire arrays
L Li, S Yuan, K Amina, P Zhai, Y Su, R Lou… - Sensors and Actuators A …, 2022 - Elsevier
Wide band gap semiconductor 4H-SiC has been considered as the most promising
candidate for developing solar blind ultraviolet (UV) photodetectors (PDs). However, the …
candidate for developing solar blind ultraviolet (UV) photodetectors (PDs). However, the …
Photovoltaic effect-based multifunctional photodetection and position sensing using a 3C-SiC/Si heterojunction
With the increasing interest in the photovoltage generation mechanisms in different
materials and structures, this study presents the first investigation of multifunctional light …
materials and structures, this study presents the first investigation of multifunctional light …
Ultra-high sensitivity MEMS pressure sensor utilizing bipolar junction transistor for pressures ranging from− 1 to 1 kPa
M Basov - IEEE Sensors Journal, 2020 - ieeexplore.ieee.org
The theoretical model and experimental characteristics of ultra-high sensitivity MEMS
pressure sensor chip for 1 kPa utilizing a novel electrical circuit are presented. The electrical …
pressure sensor chip for 1 kPa utilizing a novel electrical circuit are presented. The electrical …
Generation of a charge carrier gradient in a 3C-SiC/Si heterojunction with asymmetric configuration
It is critical to investigate the charge carrier gradient generation in semiconductor junctions
with an asymmetric configuration, which can open a new platform for developing lateral …
with an asymmetric configuration, which can open a new platform for developing lateral …
The concept of light-harvesting, self-powered mechanical sensors using a monolithic structure
In the age of Internet-of-Things (IoT), 5G wireless networks, the drive towards
decarbonization of the energy system, and to reducing environmental pollution, developing …
decarbonization of the energy system, and to reducing environmental pollution, developing …