Atomistic full-band simulations of silicon nanowire transistors: Effects of electron-phonon scattering
An atomistic full-band quantum transport simulator has been developed to study three-
dimensional Si nanowire field-effect transistors in the presence of electron-phonon …
dimensional Si nanowire field-effect transistors in the presence of electron-phonon …
Atomistic simulation of realistically sized nanodevices using NEMO 3-D—Part I: Models and benchmarks
G Klimeck, SS Ahmed, H Bae… - … on Electron Devices, 2007 - ieeexplore.ieee.org
Device physics and material science meet at the atomic scale of novel nanostructured
semiconductors, and the distinction between new device or new material is blurred. Not only …
semiconductors, and the distinction between new device or new material is blurred. Not only …
Onsite matrix elements of the tight-binding Hamiltonian of a strained crystal: Application to silicon, germanium, and their alloys
We discuss a model for the onsite matrix elements of the sp 3 d 5 s∗ tight-binding
Hamiltonian of a strained diamond or zinc-blende crystal or nanostructure. This model …
Hamiltonian of a strained diamond or zinc-blende crystal or nanostructure. This model …
Strained germanium thin film membrane on silicon substrate for optoelectronics
This work presents a novel method to introduce a sustainable biaxial tensile strain larger
than 1% in a thin Ge membrane using a stressor layer integrated on a Si substrate. Raman …
than 1% in a thin Ge membrane using a stressor layer integrated on a Si substrate. Raman …
Roadmap to an efficient germanium-on-silicon laser: strain vs. n-type doping
B Dutt, DS Sukhdeo, D Nam, BM Vulovic… - IEEE Photonics …, 2012 - ieeexplore.ieee.org
We provide a theoretical analysis of the relative merits of tensile strain and n-type doping as
approaches to realizing an efficient low-power germanium laser. Ultimately, tensile strain …
approaches to realizing an efficient low-power germanium laser. Ultimately, tensile strain …
Bandgap engineering of group IV materials for complementary n and p tunneling field effect transistors
Direct bandgap transition engineering using stress, alloying, and quantum confinement is
proposed to achieve high performing complementary n and p tunneling field effect …
proposed to achieve high performing complementary n and p tunneling field effect …
Electroluminescence from strained germanium membranes and implications for an efficient Si-compatible laser
We demonstrate room-temperature electroluminescence (EL) from light-emitting diodes
(LEDs) on highly strained germanium (Ge) membranes. An external stressor technique was …
(LEDs) on highly strained germanium (Ge) membranes. An external stressor technique was …
Transferable tight-binding model for strained group IV and III-V materials and heterostructures
It is critical to capture the effect due to strain and material interface for device level transistor
modeling. We introduce a transferable sp 3 d 5 s* tight-binding model with nearest-neighbor …
modeling. We introduce a transferable sp 3 d 5 s* tight-binding model with nearest-neighbor …
Performance analysis of statistical samples of graphene nanoribbon tunneling transistors with line edge roughness
Using a three-dimensional, atomistic quantum transport simulator based on the tight-binding
method, we investigate statistical samples of single-gate graphene nanoribbon (GNR) …
method, we investigate statistical samples of single-gate graphene nanoribbon (GNR) …
Unfolding of electronic structure through induced representations of space groups: Application to Fe-based superconductors
We revisit the problem that relevant parts of band structures for a given cell choice can
reflect exact or approximate higher symmetries of subsystems in the cell and can therefore …
reflect exact or approximate higher symmetries of subsystems in the cell and can therefore …