As a strong candidate for future electronics, atomically thin black phosphorus (BP) has
attracted great attention in recent years because of its tunable bandgap and high carrier …

This paper discusses self-heating (SHE) effects in silicon-on-insulator (SOI) CMOS
technology and applies device simulation to analyze the impact of thermal effects on the …

In this paper, and in Part II, Monte Carlo (MC) simulations including quantum corrections to
the potential and calibrated scattering models are used to study electronic transport in bulk …

We discuss selected aspects of the physics of electronic transport in nMOSFETs at the 10-
nm scale: Long-range Coulomb interactions, which may degrade performance and even …

We investigate the transport properties of silicon-nanowire FETs by using two different
approaches to the solution of the Boltzmann equation for the quasi-1-D electron gas …

In our attempts to scale FETs to the 10 nm length, alternatives to conventional Si CMOS are
sought on the grounds that:(1) Si seems to have reached its technological and performance …

This paper presents a new self-consistent multisubband Monte Carlo model for electronic
transport in the inversion layer of decananometric MOSFETs. The simulator is 2-D in real …

The DC current-voltage characteristics of an n-channel silicon MOSFET with an effective
gate length of about 60 nm are analyzed and interpreted in terms of scattering theory. The …

The speed performance of a double-gate (DG) FinFET CMOS with gate-source/drain (GS/D)
underlap is investigated using 2-D device and mixed-mode circuit simulation. By optimizing …

This paper discusses self-heating effects in different silicon-on-insulator architectures by 3D
electro-thermal simulations. First of all, we compare different device architectures such as …