This article provides an overview of recent development of sputtering method for high-quality
III-nitride semiconductor materials and devices. Being a mature deposition technique widely …

In this study, we successfully developed a carbon dioxide (CO2)-laser-assisted metal–
organic chemical vapor deposition (LMOCVD) approach to fast synthesis of high-quality …

The ion beam analysis (IBA) techniques of Rutherford backscattering spectrometry (RBS),
elastic recoil detection analysis (ERDA), nuclear reaction analysis (NRA), and particle …

Gallium nitride (GaN) is considered one of most important semiconductor materials for the
21st century due to its combination of properties (high breakdown field, high electron …

GaN single-crystalline layers were grown by reactive radio-frequency magnetron sputter
epitaxy using N 2/Ar ambient gas and Ga target. The GaN layers were grown directly on Al 2 …

GaN films have been deposited by radio frequency sputtering of a GaAs target with pure
nitrogen. The growth, composition, and structure of the films deposited on quartz substrates …

Single-crystalline layers of GaN and related alloys such as AlGaN and InGaN were grown
on Al2O3 (0001) substrates by radio-frequency magnetron sputter epitaxy. The crystalline …

Aluminium nitride (AlN) films have been fabricated on Si (100) substrates by an ion-beam-
assisted filtered cathodic vacuum arc technique at low temperature. The structural and …

The combined effects of substrate temperature, substrate orientation, and energetic particle
impingement on the structure of GaN films grown by reactive radio-frequency magnetron …

Direct heteroepitaxial growth of uniform stoichiometric CuInS 2 (CIS) thin films on sapphire
(0001) substrates has been achieved by radio frequency reactive sputtering. X-ray ω–2θ …