Measurement of spin-polarized photoemission from wurtzite and zinc blende gallium nitride photocathodes
SJ Levenson, MB Andorf, BD Dickensheets… - Applied Physics …, 2024 - pubs.aip.org
Spin-polarized photoemission from wurtzite and zinc blende gallium nitride (GaN)
photocathodes has been observed and measured. The p-doped GaN photocathodes were …
photocathodes has been observed and measured. The p-doped GaN photocathodes were …
Anisotropic excitonic photocurrent in
Polarization-dependent photocurrent spectra are measured on a (001) β-Ga 2 O 3 Schottky
photodetector, where the linear polarization of light is rotated within the ab plane. Three …
photodetector, where the linear polarization of light is rotated within the ab plane. Three …
Spectral Measurement of the Breakdown Limit of and Tunnel Ionization of Self-Trapped Excitons and Holes
Owing to its strong ionic character coupled with a light electron effective mass, β-Ga 2 O 3 is
an unusual semiconductor where large electric fields (approximately 1–6 MV/cm) can be …
an unusual semiconductor where large electric fields (approximately 1–6 MV/cm) can be …
Anisotropic Beer-Lambert law in -: Polarization-dependent absorption and photoresponsivity spectra
Due to its low symmetry, β-Ga 2 O 3 exhibits a strongly anisotropic optical response. As a
result, the absorption spectra change with the polarization state of the incoming photons. To …
result, the absorption spectra change with the polarization state of the incoming photons. To …
[图书][B] Measurement of Local Electric Fields and the Onset of Breakdown in Ultra-wide Band Gap Semiconductor Devices using Photocurrent Spectroscopy
D Verma - 2023 - search.proquest.com
Abstract Ultra-wide-bandgap (UWBG) materials-based power electronic devices suffer from
unexpected and uncertain locations of non-uniformity, and high fields degrade these …
unexpected and uncertain locations of non-uniformity, and high fields degrade these …
Behavior of defects in GaN avalanche photodiodes grown on GaN substrates
F Yang, Z Gong, F Shi, J Xu, X Li - Japanese Journal of Applied …, 2024 - iopscience.iop.org
GaN avalanche photodiodes grown on GaN substrates were successfully fabricated. These
devices displayed a low dark current, measuring< 80 pA at a reverse bias of 82.0 V. Notably …
devices displayed a low dark current, measuring< 80 pA at a reverse bias of 82.0 V. Notably …
The anisotropic Beer-Lambert law in -GaO: Spectral and polarization dependent absorption and photoresponsivity
Due to its low symmetry, $\beta $-Ga $ _ {2} $ O $ _ {3} $ exhibits a strongly anisotropic
optical response. As a result, the absorption spectra change with the polarization state of the …
optical response. As a result, the absorption spectra change with the polarization state of the …
Probing Exciton Physics in Wide Bandgap Materials to Understand the Absorption and Photoresponsivity Behavior with Applications
MMR Adnan - 2024 - search.proquest.com
An exciton is an electrically neutral quasiparticle that consists of an electron and a hole
attracted to each other by the Coulombic force of attraction due to the opposite charge of the …
attracted to each other by the Coulombic force of attraction due to the opposite charge of the …
[PDF][PDF] Spectral measurement of the breakdown limit of β-Ga2O3 and field-dependent dissociation of self-trapped excitons and holes
MMR Adnan1&, D Verma2&, Z Xia… - ArXiv Condensed …, 2020 - researchgate.net
Owing to its strong ionic character coupled with a light electron effective mass, β-Ga2O3 is
an unusual semiconductor where large electric fields (~ 1-6 MV/cm) can be applied while …
an unusual semiconductor where large electric fields (~ 1-6 MV/cm) can be applied while …