This is the first book dedicated to the next generation of MOSFET models. Addressed to
circuit designers with an in-depth treatment that appeals to device specialists, the book …

State-of-the-art silicon devices and integrated process technologies are covered in this
book. The eight chapters represent a comprehensive discussion of modern silicon devices …

Bipolar junction transistors (BJT) are widely used integrated devices for analog circuits. For
most of analog applications, the process variation and the match performance of BJT pairs …

In this work, we analyze the impact of random dopant fluctuations (RDFs) on the mismatch
behavior of the negative capacitance field-effect transistor (NCFET). We observe that the …

A new analog mismatch model in circuit level has been developed. MOS transistor's small
signal parameters are modeled in term of their matching character for both strong-and weak …

This work presents a computer-aided design (CAD) approach for voltage reference circuits
by controlling main characteristics, such as temperature coefficient, power consumption …

Diversos modelos teóricos para o descasamento entre dispositivos na tecnologia MOS
foram propostos desde a década de'80, sendo que geralmente estes pecam ou pela …

A robust floating point CMOS image sensor (CIS) is designed and tested. A detailed analysis
for signal-to-noise ratio (SNR) of the floating point CIS including the effect of the exponent …

Pocket architecture is a useful technique to eliminate short channel effects to provide smaller
transistors sizes. However, it has been shown that it has an important drawback on …

In this work, the drain-current mismatch is characterized from linear to the saturation regime.
Characterizations are performed for N-MOS transistors with and without pocket-implants. A …