Non-and semipolar GaN-based optoelectronic device structures have attracted much
attention in recent years. Best results have been obtained on small bulk substrates cut from …

Abstract Growth of InGaN/GaN light-emitting devices on nonpolar or semipolar planes offers
a viable approach to reducing or eliminating the issues associated with polarization-related …

Despite the rapid commercialization of III-nitride semiconductor devices for applications in
visible and ultraviolet optoelectronics and in high-power and high-frequency electronics …

We demonstrate high power yellow InGaN single-quantum-well light-emitting diodes (LEDs)
with a peak emission wavelength of 562.7 nm grown on low extended defect density …

Abstract m-Plane (10-10) nonpolar InGaN-based light emitting diodes (LEDs) with no
threading dislocations or stacking faults have been realized on m-plane GaN single crystals …

Continuous-wave (CW) operation of nonpolar m-plane InGaN/GaN laser diodes (LDs) with
the lasing wavelengths approximately 400 nm was demonstrated. The threshold current was …

We demonstrate a high power green InGaN/GaN multiple‐quantum‐well (MQW) light
emitting diode (LED) with a peak emission wavelength of 516 nm grown on low extended …

The first 30-mW-class semipolar blue light-emitting diode (LED) on a free-standing (10 bar 1
bar 1) GaN substrate has been demonstrated by using microscale periodic backside …

We report the fabrication of violet InGaN/GaN light-emitting diodes (LEDs) on semipolar
(1011) GaN bulk substrates. The LEDs have a dimension of 300× 300 µm 2 and are …

Blue In Ga N∕ Ga N multiple-quantum-well light emitting diodes with a peak emission
wavelength of 444 nm were grown on low extended defect density semipolar (10 1 1) bulk …