Semipolar GaN grown on foreign substrates: a review
F Scholz - Semiconductor Science and technology, 2012 - iopscience.iop.org
Non-and semipolar GaN-based optoelectronic device structures have attracted much
attention in recent years. Best results have been obtained on small bulk substrates cut from …
attention in recent years. Best results have been obtained on small bulk substrates cut from …
Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices
RM Farrell, EC Young, F Wu… - Semiconductor …, 2012 - iopscience.iop.org
Abstract Growth of InGaN/GaN light-emitting devices on nonpolar or semipolar planes offers
a viable approach to reducing or eliminating the issues associated with polarization-related …
a viable approach to reducing or eliminating the issues associated with polarization-related …
GaN substrates for III-nitride devices
Despite the rapid commercialization of III-nitride semiconductor devices for applications in
visible and ultraviolet optoelectronics and in high-power and high-frequency electronics …
visible and ultraviolet optoelectronics and in high-power and high-frequency electronics …
Optical properties of yellow light-emitting diodes grown on semipolar (112¯ 2) bulk GaN substrates
H Sato, RB Chung, H Hirasawa, N Fellows… - Applied Physics …, 2008 - pubs.aip.org
We demonstrate high power yellow InGaN single-quantum-well light-emitting diodes (LEDs)
with a peak emission wavelength of 562.7 nm grown on low extended defect density …
with a peak emission wavelength of 562.7 nm grown on low extended defect density …
Dislocation-free m-plane InGaN/GaN light-emitting diodes on m-plane GaN single crystals
K Okamoto, H Ohta, D Nakagawa… - Japanese Journal of …, 2006 - iopscience.iop.org
Abstract m-Plane (10-10) nonpolar InGaN-based light emitting diodes (LEDs) with no
threading dislocations or stacking faults have been realized on m-plane GaN single crystals …
threading dislocations or stacking faults have been realized on m-plane GaN single crystals …
Continuous-wave operation of m-plane InGaN multiple quantum well laser diodes
K Okamoto, H Ohta, SF Chichibu… - Japanese journal of …, 2007 - iopscience.iop.org
Continuous-wave (CW) operation of nonpolar m-plane InGaN/GaN laser diodes (LDs) with
the lasing wavelengths approximately 400 nm was demonstrated. The threshold current was …
the lasing wavelengths approximately 400 nm was demonstrated. The threshold current was …
High power and high efficiency green light emitting diode on free‐standing semipolar (11 ̄2 2) bulk GaN substrate
H Sato, A Tyagi, H Zhong, N Fellows… - physica status solidi …, 2007 - Wiley Online Library
We demonstrate a high power green InGaN/GaN multiple‐quantum‐well (MQW) light
emitting diode (LED) with a peak emission wavelength of 516 nm grown on low extended …
emitting diode (LED) with a peak emission wavelength of 516 nm grown on low extended …
30-mW-class high-power and high-efficiency blue semipolar (1011) InGaN/GaN light-emitting diodes obtained by backside roughening technique
Y Zhao, J Sonoda, CC Pan, S Brinkley… - Applied physics …, 2010 - iopscience.iop.org
The first 30-mW-class semipolar blue light-emitting diode (LED) on a free-standing (10 bar 1
bar 1) GaN substrate has been demonstrated by using microscale periodic backside …
bar 1) GaN substrate has been demonstrated by using microscale periodic backside …
High brightness violet InGaN/GaN light emitting diodes on semipolar (1011) bulk GaN substrates
We report the fabrication of violet InGaN/GaN light-emitting diodes (LEDs) on semipolar
(1011) GaN bulk substrates. The LEDs have a dimension of 300× 300 µm 2 and are …
(1011) GaN bulk substrates. The LEDs have a dimension of 300× 300 µm 2 and are …
High power and high efficiency blue light emitting diode on freestanding semipolar (101¯ 1¯) bulk GaN substrate
Blue In Ga N∕ Ga N multiple-quantum-well light emitting diodes with a peak emission
wavelength of 444 nm were grown on low extended defect density semipolar (10 1 1) bulk …
wavelength of 444 nm were grown on low extended defect density semipolar (10 1 1) bulk …