Thin gate oxide damage due to plasma processing
Plasma processes cause current to flow through the thin oxide and the resultant plasma-
induced damage can be simulated and modelled as damage produced by constant-current …
induced damage can be simulated and modelled as damage produced by constant-current …
ESD/antenna diodes for through-silicon vias
Q Su, M Ni, ZW Tang, J Kawa, JD Sproch - US Patent 8,264,065, 2012 - Google Patents
BACKGROUND The present invention relates to methods and structures for addressing ESD
and antenna effects experienced by devices in the presence of through-silicon Vias …
and antenna effects experienced by devices in the presence of through-silicon Vias …
Plasma processing
DB Graves - IEEE transactions on Plasma Science, 1994 - ieeexplore.ieee.org
Low pressure, non-equilibrium, weakly to partially ionized gas discharge plasmas are used
for a variety of surface materials processing applications. The most extensive applications …
for a variety of surface materials processing applications. The most extensive applications …
Charge damage caused by electron shading effect
KHK Hashimoto - Japanese journal of applied physics, 1994 - iopscience.iop.org
An antenna covered with photoresist patterns having high-aspect-ratio openings caused
charge damage to the gate oxide in various processing plasmas. This damage increased …
charge damage to the gate oxide in various processing plasmas. This damage increased …
Low-temperature chemical vapor deposition processes and dielectrics for microelectronic circuit manufacturing at IBM
DR Cote, SV Nguyen, WJ Cote… - IBM Journal of …, 1995 - ieeexplore.ieee.org
Significant progress has been made over the past decade in low-temperature plasma-
enhanced and thermal chemical vapor deposition (CVD). The progress has occurred in …
enhanced and thermal chemical vapor deposition (CVD). The progress has occurred in …
Magnetically-enhanced plasma chamber with non-uniform magnetic field
H Shan, R Lindley, C Bjorkman, XY Qian… - US Patent …, 2000 - Google Patents
A plasma chamber having a magnet which produces a magnetic field such that, within a
region parallel to and adjacent to the workpiece, the direction of the magnetic field is …
region parallel to and adjacent to the workpiece, the direction of the magnetic field is …
Interface and plasma damage analysis of PEALD TaCN deposited on HfO2 for advanced CMOS studied by angle resolved XPS and C–V
F Piallat, V Beugin, R Gassilloud, L Dussault… - Applied surface …, 2014 - Elsevier
Plasma enhanced atomic layer deposition (PEALD) TaCN deposited on HfO 2 was studied
by X-ray photoelectron spectroscopy (XPS) to understand the reactions taking place at the …
by X-ray photoelectron spectroscopy (XPS) to understand the reactions taking place at the …
Time-resolved power and impedance measurements of pulsed radiofrequency discharges
LJ Overzet, FY Leong-Rousey - Plasma Sources Science and …, 1995 - iopscience.iop.org
The power to a pulsed RF discharge in the Gaseous Electronics Conference reference
reactor has been measured with sub-microsecond time resolution. There are large swings in …
reactor has been measured with sub-microsecond time resolution. There are large swings in …
An efficient method for plasma-charging damage measurement
KP Cheung - IEEE electron device letters, 1994 - ieeexplore.ieee.org
The initial slope of the voltage versus time curve during constant current stressing of gate-
oxide has been demonstrated, for the first time, as a good indicator for plasma-charging …
oxide has been demonstrated, for the first time, as a good indicator for plasma-charging …
Magnetic field optimization in a dielectric magnetically enhanced reactive ion etch reactor to produce an instantaneously uniform plasma
RA Lindley, CH Björkman, H Shan, KH Ke… - Journal of Vacuum …, 1998 - pubs.aip.org
The effect of magnetic field on plasma uniformity was investigated for a capacitively coupled
plasma in a dielectric etch chamber and a tool to measure the dc bias uniformity across the …
plasma in a dielectric etch chamber and a tool to measure the dc bias uniformity across the …