Plasma processes cause current to flow through the thin oxide and the resultant plasma-
induced damage can be simulated and modelled as damage produced by constant-current …

BACKGROUND The present invention relates to methods and structures for addressing ESD
and antenna effects experienced by devices in the presence of through-silicon Vias …

Low pressure, non-equilibrium, weakly to partially ionized gas discharge plasmas are used
for a variety of surface materials processing applications. The most extensive applications …

An antenna covered with photoresist patterns having high-aspect-ratio openings caused
charge damage to the gate oxide in various processing plasmas. This damage increased …

Significant progress has been made over the past decade in low-temperature plasma-
enhanced and thermal chemical vapor deposition (CVD). The progress has occurred in …

A plasma chamber having a magnet which produces a magnetic field such that, within a
region parallel to and adjacent to the workpiece, the direction of the magnetic field is …

Plasma enhanced atomic layer deposition (PEALD) TaCN deposited on HfO 2 was studied
by X-ray photoelectron spectroscopy (XPS) to understand the reactions taking place at the …

The power to a pulsed RF discharge in the Gaseous Electronics Conference reference
reactor has been measured with sub-microsecond time resolution. There are large swings in …

The initial slope of the voltage versus time curve during constant current stressing of gate-
oxide has been demonstrated, for the first time, as a good indicator for plasma-charging …

The effect of magnetic field on plasma uniformity was investigated for a capacitively coupled
plasma in a dielectric etch chamber and a tool to measure the dc bias uniformity across the …