The growth of hematite nanobelts and nanowires—tune the shape via oxygen gas pressure
Using the thermal oxidation of iron, we show that the growth morphologies of one-
dimensional nanostructures of hematite (α-Fe2O3) can be tuned by varying the oxygen gas …
dimensional nanostructures of hematite (α-Fe2O3) can be tuned by varying the oxygen gas …
Molecular beam epitaxy and properties of GaAsBi/GaAs quantum wells grown by molecular beam epitaxy: effect of thermal annealing
H Makhloufi, P Boonpeng, S Mazzucato… - Nanoscale Research …, 2014 - Springer
We have grown GaAsBi quantum wells by molecular beam epitaxy. We have studied the
properties of a 7% Bi GaAsBi quantum well and their variation with thermal annealing. High …
properties of a 7% Bi GaAsBi quantum well and their variation with thermal annealing. High …
Formation of strained interfaces in AlSb/InAs multilayers grown by molecular beam epitaxy for quantum cascade lasers
J Nicolaï, B Warot-Fonrose, C Gatel… - Journal of Applied …, 2015 - pubs.aip.org
Structural and chemical properties of InAs/AlSb interfaces have been studied by
transmission electron microscopy. InAs/AlSb multilayers were grown by molecular beam …
transmission electron microscopy. InAs/AlSb multilayers were grown by molecular beam …
Elastic strains at interfaces in InAs/AlSb multilayer structures for quantum cascade lasers
J Nicolaï, C Gatel, B Warot-Fonrose, R Teissier… - Applied Physics …, 2014 - pubs.aip.org
InAs/AlSb multilayers similar to those used in quantum cascade lasers have been grown by
molecular beam epitaxy on (001) InAs substrates. Elastic strain is investigated by high …
molecular beam epitaxy on (001) InAs substrates. Elastic strain is investigated by high …
Volmer–Weber InAs quantum dot formation on InP (113) B substrates under the surfactant effect of Sb
Y Zhao, SJC Mauger, N Bertru, H Folliot… - Applied Physics …, 2014 - pubs.aip.org
We report on Sb surfactant growth of InAs nanostructures on GaAs 0.51 Sb 0.49 layers
deposited on InP (001) and on (113) B oriented substrates. On the (001) orientation, the …
deposited on InP (001) and on (113) B oriented substrates. On the (001) orientation, the …
Visualising alloy fluctuations by spherical-aberration–corrected HRTEM
MJ Casanove, N Combe, F Houdellier… - Europhysics …, 2010 - iopscience.iop.org
Under specific conditions of specimen thickness and experimental settings, aberration-
corrected high-resolution transmission electron microscopy images of a SiGe alloy grown on …
corrected high-resolution transmission electron microscopy images of a SiGe alloy grown on …
Sb surfactant mediated growth of InAs/AlAs0. 56Sb0. 44 strained quantum well for intersubband absorption at 1.55 μm
Surfactant mediated growth of strained InAs/AlAs 0.56 Sb 0.44 quantum wells on InP (001)
substrate is investigated. X ray diffraction and transmission electron microscopy analysis …
substrate is investigated. X ray diffraction and transmission electron microscopy analysis …
Carrier injection in GaAsPN/GaPN quantum wells on Silicon
We report efficient carrier injection in GaAsPN/GaPN quantum wells grown on Si.
Electroluminescence of GaAsPN/GaPN and GaAsP/GaP quantum wells is first presented …
Electroluminescence of GaAsPN/GaPN and GaAsP/GaP quantum wells is first presented …
[PDF][PDF] Carrier injection in GaAsPN/GaPN quantum wells on Silicon
We report efficient carrier injection in GaAsPN/GaPN quantum wells grown on Si.
Electroluminescence of GaAsPN/GaPN and GaAsP/GaP quantum wells is first presented …
Electroluminescence of GaAsPN/GaPN and GaAsP/GaP quantum wells is first presented …
[引用][C] Strain Analysis in Transmission Electron Microscopy: How Far can we go?
A Ponchet, C Gatel, C Roucau… - Mechanical Stress on …, 2011 - Wiley Online Library
This chapter contains sections titled: Introduction: How to Get Quantitative Information on
Strain from TEM Bending Effects in Nanometric Strained Layers: A Tool for Probing Stress …
Strain from TEM Bending Effects in Nanometric Strained Layers: A Tool for Probing Stress …