Evolutions of bonding wires used in semiconductor electronics: perspective over 25 years
CL Gan, U Hashim - Journal of Materials Science: Materials in Electronics, 2015 - Springer
The objective of this review is to study the evolution and key findings and critical technical
challenges, solutions and future trend of bonding wires used in semiconductor electronics …
challenges, solutions and future trend of bonding wires used in semiconductor electronics …
Some thoughts on bondability and strength of gold wire bonding
The bonding mechanisms of gold, to give the desired strength of wire bonding, still require
detailed investigation, including establishing adequate and reliable testing procedures. The …
detailed investigation, including establishing adequate and reliable testing procedures. The …
Interfacial microstructures and thermodynamics of thermosonic Cu-wire bonding
J Li, L Liu, L Deng, B Ma, F Wang… - IEEE Electron Device …, 2011 - ieeexplore.ieee.org
The interfacial microstructures of the Cu-wire bonding to an Al pad are investigated first by
using an X-ray microdiffractometer and high-resolution transmission electron microscopy. It …
using an X-ray microdiffractometer and high-resolution transmission electron microscopy. It …
[HTML][HTML] Influence of Pd-Layer Thickness on Bonding Reliability of Pd-Coated Cu Wire
J Fan, D Yuan, J Du, T Hou, F Wang, J Cao, X Yang… - Micromachines, 2024 - mdpi.com
In this paper, three Pd-coated Cu (PCC) wires with different Pd-layer thicknesses were used
to make bonding samples, and the influence of Pd-layer thickness on the reliability of …
to make bonding samples, and the influence of Pd-layer thickness on the reliability of …
Interfacial characteristics and dynamic process of Au-and Cu-wire bonding and overhang bonding in microelectronics packaging
J Li, X Zhang, L Liu, L Han - Journal of microelectromechanical …, 2012 - ieeexplore.ieee.org
Microstructure characteristics of Cu-wire bonding interface are investigated first by using the
X-ray microdiffractometer, and the dynamic process of Cu-and Au-wire overhang bonding is …
X-ray microdiffractometer, and the dynamic process of Cu-and Au-wire overhang bonding is …
Future and technical considerations of gold wirebonding in semiconductor packaging–a technical review
C Leong Gan, F Classe, B Lee Chan… - Microelectronics …, 2014 - emerald.com
Purpose–The purpose of this paper is to provide a systematic review on technical findings
and discuss the feasibility and future of gold (Au) wirebonding in microelectronics …
and discuss the feasibility and future of gold (Au) wirebonding in microelectronics …
Role of impact ultrasound on bond strength and Al pad splash in Cu wire bonding
Cu wire is replacing Au wire in the microelectronic industry due to its lower cost. However,
during Cu ball bonding one of the main challenges is the increased stress that can damage …
during Cu ball bonding one of the main challenges is the increased stress that can damage …
Nanoscale characterization of copper oxide films by Kelvin Probe Force Microscopy
T Berthold, G Benstetter, W Frammelsberger… - Thin Solid Films, 2015 - Elsevier
Abstract In this work PeakForce Kelvin Probe Force Microscopy (PF-KPFM) at ambient
environment is used to characterize both oxidation states of copper (Cu) surfaces, cupric …
environment is used to characterize both oxidation states of copper (Cu) surfaces, cupric …
Effect of ultrasonic energy on nanoscale interfacial structure in copper wire bonding on aluminium pads
The effect of ultrasonic vibration on nanoscale interfacial structure of thermosonic copper
wire bonding on aluminium pads was investigated. It was found that bonding strength was …
wire bonding on aluminium pads was investigated. It was found that bonding strength was …
Ultrasonic Al Bond on Mo Back-Contact Layer of CIGS Solar Panel Characterization using Infinite Focus Microscope (IFM) and Micro-Ohm Meter
SA Hamid, MN Zulkifli, A Jalar… - IEEE Transactions …, 2024 - ieeexplore.ieee.org
The aim of this study is to identify the bonding mechanisms of the ultrasonic Al bond on the
Mo back-contact layer (Al-Mo system) of a copper indium gallium (de) selenide (CIGS) thin …
Mo back-contact layer (Al-Mo system) of a copper indium gallium (de) selenide (CIGS) thin …