Technology and reliability of normally-off GaN HEMTs with p-type gate
M Meneghini, O Hilt, J Wuerfl, G Meneghesso - Energies, 2017 - mdpi.com
GaN-based transistors with p-GaN gate are commonly accepted as promising devices for
application in power converters, thanks to the positive and stable threshold voltage, the low …
application in power converters, thanks to the positive and stable threshold voltage, the low …
Atomic layer deposition of silicon nitride thin films: a review of recent progress, challenges, and outlooks
With the continued miniaturization of devices in the semiconductor industry, atomic layer
deposition (ALD) of silicon nitride thin films (SiNx) has attracted great interest due to the …
deposition (ALD) of silicon nitride thin films (SiNx) has attracted great interest due to the …
Forward bias gate breakdown mechanism in enhancement-mode p-GaN gate AlGaN/GaN high-electron mobility transistors
In this letter, we studied the forward bias gate breakdown mechanism on enhancement-
mode p-GaN gate AlGaN/GaN high-electron mobility transistors. To the best of our …
mode p-GaN gate AlGaN/GaN high-electron mobility transistors. To the best of our …
Reliability and failure analysis in power GaN-HEMTs: An overview
M Meneghini, I Rossetto, C De Santi… - 2017 IEEE …, 2017 - ieeexplore.ieee.org
Power GaN transistors have recently demonstrated to be excellent devices for application in
power electronics. The high breakdown field and the superior mobility of the 2-dimensional …
power electronics. The high breakdown field and the superior mobility of the 2-dimensional …
Negative bias-induced threshold voltage instability in GaN-on-Si power HEMTs
M Meneghini, I Rossetto, D Bisi… - IEEE Electron …, 2016 - ieeexplore.ieee.org
This letter reports an in-depth study of the negative threshold voltage instability in GaN-on-Si
metal-insulator–semiconductor high electron mobility transistors with partially recessed …
metal-insulator–semiconductor high electron mobility transistors with partially recessed …
Normally-Off LPCVD-SiNx/GaN MIS-FET With Crystalline Oxidation Interlayer
Developing effective technique to protect the etched-GaN surface from the degradation in a
high-temperature (ie, at~ 780° C) process, such as low-pressure chemical vapor deposition …
high-temperature (ie, at~ 780° C) process, such as low-pressure chemical vapor deposition …
Machine learning-based statistical approach to analyze process dependencies on threshold voltage in recessed gate AlGaN/GaN MIS-HEMTs
In this work, we demonstrate the use of a machine learning (ML)-based statistical approach
to model and analyze the impact of the fabrication processes on the threshold voltage in …
to model and analyze the impact of the fabrication processes on the threshold voltage in …
Toward understanding positive bias temperature instability in fully recessed-gate GaN MISFETs
In this paper, fully recessed-gate GaN MISFETs with two different gate dielectrics, ie, plasma-
enhanced atomic layer deposition (PEALD) SiN and ALD Al 2 O 3 gate dielectric, are used …
enhanced atomic layer deposition (PEALD) SiN and ALD Al 2 O 3 gate dielectric, are used …
Investigation of the Trap States and Instability in LPCVD Si3N4/AlGaN/GaN MIS-HEMTs with an In-Situ Si3N4 Interfacial Layer
H Sun, M Wang, R Yin, J Chen, S Xue… - … on Electron Devices, 2019 - ieeexplore.ieee.org
A novel gate and passivation dielectric stack consisting of a thin metal-organic chemical
vapor deposition (MOCVD) grown in-situ Si 3 N 4 (3 nm) and a thick lowpressure chemical …
vapor deposition (MOCVD) grown in-situ Si 3 N 4 (3 nm) and a thick lowpressure chemical …
Gate stability of GaN-based HEMTs with p-type gate
M Meneghini, I Rossetto, V Rizzato, S Stoffels… - Electronics, 2016 - mdpi.com
This paper reports on an extensive investigation of the gate stability of GaN-based High
Electron Mobility Transistors with p-type gate submitted to forward gate stress. Based on …
Electron Mobility Transistors with p-type gate submitted to forward gate stress. Based on …