Frequency dependent dielectric spectroscopy of Au/n-Si structure with stannic oxide (SnO2) interfacial layer
S Karadeniz, DE Yıldız - Journal of Materials Science: Materials in …, 2023 - Springer
This study investigated the frequency dependent dielectric spectrum of Au/Si structures in
which stannic oxide (SnO2) films formed by spin coating technique on silicon substrate were …
which stannic oxide (SnO2) films formed by spin coating technique on silicon substrate were …
Dark and illuminated electrical characteristics of Schottky device with Zn-complex interface layer
In this study, metal/Zn-complex/semiconductor (MPS) Schottky photodiodes are fabricated.
Interface layer is deposited using a metal-nicotinate/nicotinamide mixed ligand [Zn …
Interface layer is deposited using a metal-nicotinate/nicotinamide mixed ligand [Zn …
Frequency effect on electrical and dielectric characteristics of HfO2-interlayered Si-based Schottky barrier diode
This study reveals the electrical properties of In/HfO 2/n-Si structure with atomic layer-
deposited interfacial oxide layer, HfO 2 thin film between In top metal contact and …
deposited interfacial oxide layer, HfO 2 thin film between In top metal contact and …
Influence of the annealing atmosphere and precursor's thickness on the properties of CZTSSe based solar cells
S Temgoua, R Bodeux, N Naghavi - Solar Energy Materials and Solar …, 2019 - Elsevier
Abstract Cu-Zn-Sn-S sulfide precursors with various thicknesses, ranging from 0.8 µm to 1.7
µm were annealed under two types of annealing atmosphere: a pure (Se) atmosphere and a …
µm were annealed under two types of annealing atmosphere: a pure (Se) atmosphere and a …
The frequency dependent electrical properties of MIS structures with Mn-doped complexed interfacial layer
In this study, Mn doped complexes were produced and used as an interfacial layer in Au/Mn-
complex/n-Si structure. For this aim, a mixed ligand complex was prepared and doped with …
complex/n-Si structure. For this aim, a mixed ligand complex was prepared and doped with …
Morphological control of Cu2ZnSn (S, Se) 4 absorber films via inverted annealing for high-performance solar cells
In recent years, the method of forming Cu 2 ZnSn (S, Se) 4 (CZTSSe) by heating precursors
has been widely used, but the chalcogen vapor conditions and the placement of the sample …
has been widely used, but the chalcogen vapor conditions and the placement of the sample …
Studies on the influence of etching solution on the properties of Cu2ZnSn (S, Se4) thin film solar cells
Abstract Cu 2 ZnSn (S, Se) 4 (CZTSSe) thin film solar cells (TFSCs) have emerged as the
most promising low-cost alternatives to well-established CuInGaS 2 and CuInS 2-based …
most promising low-cost alternatives to well-established CuInGaS 2 and CuInS 2-based …
Quantification of effective thermal conductivity in the annealing process of Cu 2 ZnSn (S, Se) 4 solar cells with 9.7% efficiency fabricated by magnetron sputtering
Cu2ZnSn (S, Se) 4 (CZTSSe) has attracted much attention as the absorption layer of
photovoltaic devices because of its appropriate bandgap energy and low cost. However …
photovoltaic devices because of its appropriate bandgap energy and low cost. However …
Preparation and characterization of copper zinc tin sulfide-selenide thin films using a single target RF sputtering method
SA Hegazy, H Abou-Gabal, MB Soliman, MH Hassan - Thin Solid Films, 2019 - Elsevier
Copper zinc tin sulfide-selenide (CZTSSe) thin films have been prepared from a single
alloyed CZTSSe target using one-step RF plasma magnetron sputtering technique. The films …
alloyed CZTSSe target using one-step RF plasma magnetron sputtering technique. The films …
Light Intensity Effects on Schottky Device Fabricated with Zn-Complex as an Interfacial Layer
In this study, metal/Zn-complex/semiconductor (MPS) Schottky photodiodes were fabricated.
To perform this, a metal-nicotinate/nicotinamide mixed ligand [Zn (C 6 H 6 N 2 O) 2 (C 6 H 4 …
To perform this, a metal-nicotinate/nicotinamide mixed ligand [Zn (C 6 H 6 N 2 O) 2 (C 6 H 4 …