Quantum guidelines for solid-state spin defects
Defects with associated electron and nuclear spins in solid-state materials have a long
history relevant to quantum information science that goes back to the first spin echo …
history relevant to quantum information science that goes back to the first spin echo …
Strain engineering in electrocatalysts: fundamentals, progress, and perspectives
X Yang, Y Wang, X Tong, N Yang - Advanced Energy Materials, 2022 - Wiley Online Library
Strain engineering of nanomaterials, namely, designing, tuning, or controlling surface strains
of nanomaterials is an effective strategy to achieve outstanding performance in different …
of nanomaterials is an effective strategy to achieve outstanding performance in different …
Structure modulation of two-dimensional transition metal chalcogenides: recent advances in methodology, mechanism and applications
Y Xiao, C Xiong, MM Chen, S Wang, L Fu… - Chemical Society …, 2023 - pubs.rsc.org
Together with the development of two-dimensional (2D) materials, transition metal
dichalcogenides (TMDs) have become one of the most popular series of model materials for …
dichalcogenides (TMDs) have become one of the most popular series of model materials for …
[HTML][HTML] Low-defect-density WS2 by hydroxide vapor phase deposition
Abstract Two-dimensional (2D) semiconducting monolayers such as transition metal
dichalcogenides (TMDs) are promising channel materials to extend Moore's Law in …
dichalcogenides (TMDs) are promising channel materials to extend Moore's Law in …
Synergistic effect of the surface vacancy defects for promoting photocatalytic stability and activity of ZnS nanoparticles
B Xiao, T Lv, J Zhao, Q Rong, H Zhang, H Wei… - ACS …, 2021 - ACS Publications
High activity, high stability, and low cost have always been the pursuit of photocatalyst
design and development. Herein, a simple method is used to integrate abundant anion …
design and development. Herein, a simple method is used to integrate abundant anion …
Layered semiconducting 2D materials for future transistor applications
SK Su, CP Chuu, MY Li, CC Cheng… - Small …, 2021 - Wiley Online Library
Down‐scaling of transistor size in the lateral dimensions must be accompanied by a
corresponding reduction in the channel thickness to ensure sufficient gate control to turn off …
corresponding reduction in the channel thickness to ensure sufficient gate control to turn off …
Origins of Fermi level pinning for Ni and Ag metal contacts on tungsten dichalcogenides
Tungsten transition metal dichalcogenides (W-TMDs) are intriguing due to their properties
and potential for application in next-generation electronic devices. However, strong Fermi …
and potential for application in next-generation electronic devices. However, strong Fermi …
In Situ Oxygen Doping of Monolayer MoS2 for Novel Electronics
In 2D semiconductors, doping offers an effective approach to modulate their optical and
electronic properties. Here, an in situ doping of oxygen atoms in monolayer molybdenum …
electronic properties. Here, an in situ doping of oxygen atoms in monolayer molybdenum …
Dilute Rhenium Doping and its Impact on Defects in MoS2
Substitutionally doped 2D transition metal dichalcogenides are primed for next-generation
device applications such as field effect transistors (FET), sensors, and optoelectronic circuits …
device applications such as field effect transistors (FET), sensors, and optoelectronic circuits …
Exciton–photonics: from fundamental science to applications
Semiconductors in all dimensionalities ranging from 0D quantum dots and molecules to 3D
bulk crystals support bound electron–hole pair quasiparticles termed excitons. Over the past …
bulk crystals support bound electron–hole pair quasiparticles termed excitons. Over the past …