The formation of the Schottky barrier height (SBH) is a complex problem because of the
dependence of the SBH on the atomic structure of the metal-semiconductor (MS) interface …

(57) ABSTRACT A method includes growing an epitaxy semiconductor region at a major
Surface of a wafer. The epitaxy semiconductor region has an upward facing facet facing …

We explore the effect of Nb-doping on the electronic band structure and microstructure of 1-
dimensional rutile TiO 2 nanorods as a photoanode of dye sensitized solar cells (DSSCs) …

The physics of ohmic contact formation for nickel stanogermanide [Ni (Ge 1-x Sn x)] on n-
type germanium-tin (n-Ge 1-x Sn x) was investigated. Low-resistivity Ni (Ge 1-x Sn x) was …

Transition metal dichalcogenide (TMD)-based vertical Schottky heterostructures have
recently shown promise as a next generation device for a variety of applications. In order for …

The profiles and current-voltage characteristics of phosphorus (P)-and/or sulfur (S)-
introduced Ge and NiGe/Ge have been investigated to clarify the mechanism of Schottky …

TiO2 has been used in photocatalysis and photovoltaics because of its comprehensive
combination of energy band structure, carrier transport, and inertness. However, wide band …

Ion implantation is a nonequilibrium doping technique, which introduces impurity atoms into
a solid regardless of thermodynamic considerations. The formation of metastable alloys …

This letter reports the demonstration of preamorphization implant (PAI) using germanium
(Ge) and carbon (C) and its combination with presilicide sulfur (S) implant for Schottky …

The electrical current flowing across the interface between a metal and a semiconductor is
usually non-linear against the applied bias voltage, as the result of a discontinuity on the …