In this paper, a novel two-dimensional analytical model for threshold voltage on Dual
Material Surrounding Gate Junctionless MOSFET is proposed. The analytical study is aimed …

Abstract Stacked Dielectric Triple Material Cylindrical Gate All Around (SD-TM-CGAA)
Junctionless MOSFET has been explored for low power applications. This paper presents …

We have developed an analytical model of channel potential and threshold voltage of a gate‐
engineered heterostructure transistor, triple material gate aluminum gallium nitride …

In this study dual material gate FinFET is designed to work as a dielectric modulated
biosensor for detecting a variety of proteins. Surface potential, Electric field, Threshold …

In electronic gadgets era, multi-digit multiplication has found extensive applications in many
fields such as numerical computation, complex arithmetic and primitive testing process …

A 2D surface potential analytical model of a channel with graded channel triple material
double gate (GCTMDG) Silicon-on-Nothing (SON) MOSFET is proposed by intermixing the …

The book is about the fundamental and research-based outcome of Semiconductor Device
development in Electronics. The continuous shrinking of the physical size of devices is the …

Experimental realization of low-dimensional heterostructures is a challenge owing to
complex structural requirements and ultrathin thickness of the nanolayers. Material …

We have developed a 2‐dimensional analytical model to study the subthreshold swing and
channel conductance of a gate and channel engineered double gate MOSFET. Basic …

Subthreshold swing is a key term to understand the switching behavior of transistors. The
minimum swing denotes better switching. The transfer characteristics of transistors are …