Assembling your nanowire: An overview of composition tuning in ternary III–V nanowires
M Ghasemi, ED Leshchenko, J Johansson - Nanotechnology, 2020 - iopscience.iop.org
The ability to grow defect-free nanowires in lattice-mismatched material systems and to
design their properties has made them ideal candidates for applications in fields as diverse …
design their properties has made them ideal candidates for applications in fields as diverse …
Review on GaAsSb nanowire potentials for future 1D heterostructures: Properties and applications
GaAsSb nanowires (NWs) are classified as important ternary (antimony) Sb based III-V NWs
with various roles and potential to form one-dimensional heterojunction structures …
with various roles and potential to form one-dimensional heterojunction structures …
Ensemble GaAsSb/GaAs axial configured nanowire-based separate absorption, charge, and multiplication avalanche near-infrared photodetectors
In this study, molecular beam epitaxially grown axially configured ensemble GaAsSb/GaAs
separate absorption, charge, and multiplication (SACM) region-based nanowire avalanche …
separate absorption, charge, and multiplication (SACM) region-based nanowire avalanche …
Kinetically limited composition of ternary III-V nanowires
J Johansson, M Ghasemi - Physical Review Materials, 2017 - APS
Controlling the composition of ternary III-V semiconductor nanowires is of high technological
importance and the current theoretical understanding is so far limited. We derive a model for …
importance and the current theoretical understanding is so far limited. We derive a model for …
Hybrid GaAsSb/GaAs heterostructure core–shell nanowire/graphene and photodetector applications
We report the growth of vertical, high-quality GaAs0. 9Sb0. 1 nanowires (NWs) with
improved density on oxygen (O2) plasma-treated monolayer graphene/SiO2/p-Si (111) by …
improved density on oxygen (O2) plasma-treated monolayer graphene/SiO2/p-Si (111) by …
Sb-saturated high-temperature growth of extended, self-catalyzed GaAsSb nanowires on silicon with high quality
P Schmiedeke, M Döblinger… - …, 2023 - iopscience.iop.org
Ternary GaAsSb nanowires (NW) are key materials for integrated high-speed photonic
applications on silicon (Si), where homogeneous, high aspect-ratio dimensions and high …
applications on silicon (Si), where homogeneous, high aspect-ratio dimensions and high …
A Study of GaAs1–xSbx Axial Nanowires Grown on Monolayer Graphene by Ga-Assisted Molecular Beam Epitaxy for Flexible Near-Infrared Photodetectors
We report the successful growth of high-quality GaAs1–x Sb x nanowires on monolayer
graphene/SiO2/p-Si (111) using molecular beam epitaxy (MBE) for the application of a …
graphene/SiO2/p-Si (111) using molecular beam epitaxy (MBE) for the application of a …
Synthesis and optical properties of high-quality ultrathin homogeneous GaAs1− xSbx nanowires
R Zhuo, L Wen, J Wang, X Dou, L Liu, X Hou… - Science China Physics …, 2024 - Springer
Abstract Ternary GaAs 1− x Sb x nanowires with designable bandgaps and lattice constants
show important potential applications in band structure engineering as well as optical and …
show important potential applications in band structure engineering as well as optical and …
Improved performance of GaAsSb/AlGaAs nanowire ensemble Schottky barrier based photodetector via in situ annealing
In this work, we report on the pi GaAsSb/AlGaAs nanowires (NWs) ensemble device
exhibiting good spectral response up to 1.1 μm with a high responsivity of 311 AW− 1, an …
exhibiting good spectral response up to 1.1 μm with a high responsivity of 311 AW− 1, an …
MBE-grown hybrid axial core–shell nip gaassb heterojunction ensemble nanowire-based near-infrared photodetectors up to 1.5 μm
In this paper, high-performance self-assisted molecular beam epitaxy (MBE)-grown
conventional core–shell (C–S) nip GaAsSb nanowires (NWs) and a novel hybrid axial C–S …
conventional core–shell (C–S) nip GaAsSb nanowires (NWs) and a novel hybrid axial C–S …