Recent advances in flexible and stretchable electronics (FSE), a technology diverging from
the conventional rigid silicon technology, have stimulated fundamental scientific and …

Atomic layer deposition (ALD) is gaining attention as a thin film deposition method, uniquely
suitable for depositing uniform and conformal films on complex three-dimensional …

The principles of the atomic layer deposition (ALD) method are presented emphasizing the
importance of precursor and surface chemistry. With a proper adjustment of the experimental …

(56) References Cited A method for growing films for use in integrated circuits using atomic
layer deposition and a subsequent converting US PATENT DOCUMENTS step is described …

5,032,545 5,049,516 5,055,319 5,080,928 5,089,084 5, 198,029 5,302.461 5,595,606
5,614,026 5,621,681 5,625,233 5,674.563 5,674,574 5,698,022 5,735,960 5,744,374 …

A dielectric film containing HfAlO and a method of fabri cating Such a dielectric film produce
a reliable gate dielectric having an equivalent oxide thickness thinner than attainable using …

430. In an embodiment, the Zirconium-containing precursor is ZTB. In other embodiments, a
Zirconium-containing pre cursor includes but is not limited to ZrCl and Zria. The ZTB …

The present inventors devised unique atomic-layer deposi tion systems, methods, and
apparatus Suitable for aluminum oxide deposition. One exemplary method entails providing …

Integrated circuits, the key components in thousands of electronic and computer products,
are generally built layer by layer on a silicon substrate. One common technique for forming …

In the advancement of complementary metal-oxide-semiconductor device technology, SiO2
was used as an outstanding dielectric and has dominated the microelectronics industry for …