Non-volatile magnetic random-access memories (MRAMs), such as spin-transfer torque
MRAM and next-generation spin–orbit torque MRAM, are emerging as key to enabling low …

Spin–orbit torque (SOT) is an emerging technology that enables the efficient manipulation of
spintronic devices. The initial processes of interest in SOTs involved electric fields, spin …

The ability of spintronic devices to utilize an electric current for manipulating the
magnetization has resulted in large-scale developments, such as magnetic random access …

Ferromagnets with binary states are limited for applications as artificial synapses for
neuromorphic computing. Here, it is shown how synaptic plasticity of a perpendicular …

Science, engineering, and medicine ultimately demand fast information processing with ultra-
low power consumption. The recently developed spin-orbit torque (SOT)-induced …

Neuromorphic computing (NC) is gaining wide acceptance as a potential technology to
achieve low-power intelligent devices. To realize NC, researchers investigate various types …

Spintronics is a growing research field that focuses on exploring materials and devices that
take advantage of the electron's “spin” to go beyond charge based devices. The most …

Current-induced spin–orbit torques (SOTs) enable fast and efficient manipulation of the
magnetic state of magnetic tunnel junctions (MTJs), making them attractive for memory, in …

Electrically manipulating magnetic moments by spin–orbit torque (SOT) has great potential
applications in magnetic memories and logic devices. Although there have been rich SOT …

Current-induced spin–orbit torques (SOTs) enable efficient electrical manipulation of the
magnetization in heterostructures with a perpendicular magnetic anisotropy through the …