Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trends
V Miikkulainen, M Leskelä, M Ritala… - Journal of Applied …, 2013 - pubs.aip.org
Atomic layer deposition (ALD) is gaining attention as a thin film deposition method, uniquely
suitable for depositing uniform and conformal films on complex three-dimensional …
suitable for depositing uniform and conformal films on complex three-dimensional …
Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process
RL Puurunen - Journal of applied physics, 2005 - pubs.aip.org
Atomic layer deposition (ALD), a chemical vapor deposition technique based on sequential
self-terminating gas–solid reactions, has for about four decades been applied for …
self-terminating gas–solid reactions, has for about four decades been applied for …
Atomic layer deposition of metal oxides and chalcogenides for high performance transistors
Atomic layer deposition (ALD) is a deposition technique well‐suited to produce high‐quality
thin film materials at the nanoscale for applications in transistors. This review …
thin film materials at the nanoscale for applications in transistors. This review …
Applications of atomic layer deposition to nanofabrication and emerging nanodevices
H Kim, WJ Maeng - Thin solid films, 2009 - Elsevier
Recently, with scaling down of semiconductor devices, need for nanotechnology has
increased enormously. For nanoscale devices especially, each of the layers should be as …
increased enormously. For nanoscale devices especially, each of the layers should be as …
Band offsets of high K gate oxides on III-V semiconductors
J Robertson, B Falabretti - Journal of applied physics, 2006 - pubs.aip.org
III-V semiconductors have high mobility and will be used in field effect transistors with the
appropriate gate dielectric. The dielectrics must have band offsets over 1 eV to inhibit …
appropriate gate dielectric. The dielectrics must have band offsets over 1 eV to inhibit …
III–V compound semiconductor transistors—from planar to nanowire structures
Conventional silicon transistor scaling is fast approaching its limits. An extension of the logic
device roadmap to further improve future performance increases of integrated circuits is …
device roadmap to further improve future performance increases of integrated circuits is …
GaN metal-oxide-semiconductor high-electron-mobility-transistor with atomic layer deposited Al2O3 as gate dielectric
PD Ye, B Yang, KK Ng, J Bude, GD Wilk… - Applied Physics …, 2005 - pubs.aip.org
We report on a GaN metal-oxide-semiconductor high-electron-mobility-transistor (MOS-
HEMT) using atomic-layer-deposited (ALD) Al 2 O 3 as the gate dielectric. Compared to a …
HEMT) using atomic-layer-deposited (ALD) Al 2 O 3 as the gate dielectric. Compared to a …
GaAs interfacial self-cleaning by atomic layer deposition
The reduction and removal of surface oxides from GaAs substrates by atomic layer
deposition (ALD) of Al 2 O 3 and Hf O 2 are studied using in situ monochromatic x-ray …
deposition (ALD) of Al 2 O 3 and Hf O 2 are studied using in situ monochromatic x-ray …
Surface passivation of III-V compound semiconductors using atomic-layer-deposition-grown Al2O3
ML Huang, YC Chang, CH Chang, YJ Lee… - Applied Physics …, 2005 - pubs.aip.org
Al 2 O 3 was deposited on In 0.15 Ga 0.85 As∕ GaAs using atomic-layer deposition (ALD).
Without any surface preparation or postthermal treatment, excellent electrical properties of Al …
Without any surface preparation or postthermal treatment, excellent electrical properties of Al …
Performance limit of ultrathin GaAs transistors
High-electron-mobility group III–V compounds have been regarded as a promising
successor to silicon in next-generation field-effect transistors (FETs). Gallium arsenide …
successor to silicon in next-generation field-effect transistors (FETs). Gallium arsenide …