Atomic layer deposition (ALD) is gaining attention as a thin film deposition method, uniquely
suitable for depositing uniform and conformal films on complex three-dimensional …

Atomic layer deposition (ALD), a chemical vapor deposition technique based on sequential
self-terminating gas–solid reactions, has for about four decades been applied for …

Atomic layer deposition (ALD) is a deposition technique well‐suited to produce high‐quality
thin film materials at the nanoscale for applications in transistors. This review …

Recently, with scaling down of semiconductor devices, need for nanotechnology has
increased enormously. For nanoscale devices especially, each of the layers should be as …

III-V semiconductors have high mobility and will be used in field effect transistors with the
appropriate gate dielectric. The dielectrics must have band offsets over 1 eV to inhibit …

Conventional silicon transistor scaling is fast approaching its limits. An extension of the logic
device roadmap to further improve future performance increases of integrated circuits is …

We report on a GaN metal-oxide-semiconductor high-electron-mobility-transistor (MOS-
HEMT) using atomic-layer-deposited (ALD) Al 2 O 3 as the gate dielectric. Compared to a …

The reduction and removal of surface oxides from GaAs substrates by atomic layer
deposition (ALD) of Al 2 O 3 and Hf O 2 are studied using in situ monochromatic x-ray …

Al 2 O 3 was deposited on In 0.15 Ga 0.85 As∕ GaAs using atomic-layer deposition (ALD).
Without any surface preparation or postthermal treatment, excellent electrical properties of Al …

High-electron-mobility group III–V compounds have been regarded as a promising
successor to silicon in next-generation field-effect transistors (FETs). Gallium arsenide …