This paper proposed a radiation-hardened memory cell (RHMC12T) by polar design for
space applications. The proposed cell has the following advantages:(1) it can tolerate all …

SRAM cells in spacecraft or space stations are susceptible to single event upset (SEU)
caused by high-energy particle impacts. Conventional 6 T SRAM cells are more prone to soft …

Advent and rapid development of on-chip computation in applications based on internet of
things has opened space for integration of human life processes with technology. Wireless …

Summary Static Random Access Memory (SRAM) is vital in aerospace applications, but it
may experience soft errors in strong radiation environments. This paper proposes a …

As technology scales down, the critical charge (QC) of vulnerable nodes decreases, making
SRAM cells more susceptible to soft errors in the aerospace industry. This article proposes a …

Abstract Random Access Memory (RAM) refers to the main memory of a computer. For the
central processor unit (CPU) to operate quickly and effectively, it stores operating system …

Abstract Single Event Transients (SET) pose a growing challenge to reliability of memory
circuits as the device dimensions continue to shrink. It is essential to assess the effect of …

The rapid development of battery-powered gadgets has made low-power design a priority in
recent years. In addition, integrated SRAM units in contemporary soCs have become an …

This paper presents an efficient and low-power quaternary static random-access memory
(SRAM) cell based on a new quaternary inverter. For implementation, carbon nanotube field …

This paper proposes a Radiation-Hardened Low Read Delay improved 12-Transistor
(RHLRD-12T) SRAM cell. By circuit optimization technique in 16-nm CMOS technology, the …