III–V heterostructure devices for high-frequency applications
R Saravanakumar - Advanced Indium Arsenide-Based HEMT …, 2021 - taylorfrancis.com
This chapter gives an overview of the III–V heterostructure device for high-frequency
applications. The various device parameters, such as gain, drain current, transconductance …
applications. The various device parameters, such as gain, drain current, transconductance …
Fabrication of novel high frequency and high breakdown InAlAs-InGaAs pHEMTs
This paper presents a Novel low noise, high breakdown InAlAs/InGaAs pseudomorphic High
Electron Mobility Transistors (pHEMTs). The improvements in breakdown voltage are …
Electron Mobility Transistors (pHEMTs). The improvements in breakdown voltage are …