The monolithic hetero-integration of III/V materials on Si substrates could enable a multitude
of new device applications and functionalities which would benefit from both the excellent …

Monolithic integration of III-V on silicon has been a scientifically appealing concept for
decades. Notable progress has recently been made in this research area, fueled by …

Metal organic chemical vapor deposition of GaAs on standard nominal 300 mm Si (001)
wafers was studied. Antiphase boundary (APB) free epitaxial GaAs films as thin as 150 nm …

Systematically discusses the growth method, material properties, and applications for key
semiconductor materials MOVPE is a chemical vapor deposition technique that produces …

Using silicon in multijunction photocells leads to promising device structures for direct
photoelectrochemical water splitting. In this regard, photoelectron spectra of silicon surfaces …

The integration of III–V semiconductors with Si has been pursued for more than 25 years
since it is strongly desired in various high-efficiency applications ranging from …

Monolithic integration of III–V materials and devices on CMOS compatible on‐axis Si (001)
substrates enables a route of low‐cost and high‐density Si‐based photonic integrated …

The integration of III-V on silicon is still a hot topic as it will open up a way to co-integrate Si
CMOS logic with photonic devices. To reach this aim, several hurdles should be solved, and …

Though III–V/Si (100) heterointerfaces are essential for future epitaxial high-performance
devices, their atomic structure is an open historical question. Benchmarking of transient …

Thin gallium phosphide layers were deposited on (0 0 1) Silicon surfaces via organometallic
vapor phase epitaxy and characterized by electron channeling contrast imaging (ECCI) …