This article presents a review of the current development and challenges in memristor
modeling. We review the mechanisms of memristive devices based on various …

Transparent synaptic devices remain great prospects for a future comprehensive simulation
of artificial synapses with the combination of photoelectric coupling characteristics in the …

The undesirable sneak current path is one of the key challenges in high-density memory
integration for the emerging cross-bar memristor arrays. This work demonstrates a new …

In this research, solution-processed NiO-based memristors have been demonstrated with
three resistive switching modes, including analog resistive switching, volatile threshold …

The development of memristors operating at low switching voltages< 50 mV can be very
useful to avoid signal amplification in many types of circuits, such as those used in …

Various memristor-based synaptic devices have been proposed for implementing a
neuromorphic system. However, memristor devices typically suffer from various inherent …

The present work demonstrates the development and investigation of bipolar resistive
switching characteristics of the Al/Bi 2 WO 6/FTO thin-film memristive device. The Bi 2 WO 6 …

The development of a memristor is very important for artificial intelligence and new
electronic circuits. In this work, Ag (Al)/ZnO/WO x/FTO memristors are fabricated by …

Resistive random access memories (RRAMs) are considered as key enabling components
for a variety of emerging applications due to their capacity to support multiple resistive …

Hafnium oxides (HfO x) based flexible memristors were fabricated on polyethylene
naphtholate (PEN) substrates to simulate a variety of bio-synapse functions. By optimizing …