The unique material properties of GaN, wide bandgap, high thermal conductivity, high
breakdown voltage, high electron mobility and the device properties of GaN HEMT (High …

A nanoscale silver paste containing 30-nm silver particles that can be sintered at 280degC
was made for interconnecting semiconductor devices. Sintering of the paste produced a …

The recent shift in focus from defense and government work to commercial wireless efforts
has caused the job of the typical microwave engineer to change dramatically. The modern …

Self-heating effects and temperature rise in AlGaN/GaN HEMTs grown on silicon and
sapphire substrates are studied, exploiting transistor DC characterization methods. A …

This paper focuses on the determination and analysis of an accurate small-signal equivalent
circuit for gallium-nitride high electron-mobility transistors under different bias conditions …

Semiconductor spintronics is expected to lead to a new generation of transistors, lasers and
integrated magnetic sensors that can be used to create ultra-low power, high speed …

In this paper, the surface properties of bare and film-covered gallium nitride (GaN) in wurtzite
form,(0001) oriented, are summarized. Thin films of several elements—manganese, nickel …

The effect of Si3N4 surface passivation on breakdown of AlGaN/GaN high-electron-mobility
transistors was studied in detail by investigating dependences of the off-state breakdown …

As a heat-resistant die attach technology processed at low temperatures, three Ag filler-
based sinter joining materials have been proposed. Among these, Ag flake pastes exhibited …

We investigate the effects of ion irradiation on AlGaN/GaN high electron mobility electron
transistors using in-situ transmission electron microscopy. The experiments are performed …