Floating-domain integrated GaN driver techniques for DC–DC converters: A review
This paper presents the design challenges and advanced circuit techniques of integrated
gate drivers for non-isolated buck converters using gallium nitride (GaN) devices to achieve …
gate drivers for non-isolated buck converters using gallium nitride (GaN) devices to achieve …
A monolithic GaN power IC with on-chip gate driving, level shifting, and temperature sensing, achieving direct 48-V/1-V DC–DC conversion
D Yan, DB Ma - IEEE Journal of Solid-State Circuits, 2022 - ieeexplore.ieee.org
To unlock the full potential of monolithic gallium nitride (GaN) power integrated circuits, this
article explores the feasibility of developing efficient and reliable on-chip gate driving and …
article explores the feasibility of developing efficient and reliable on-chip gate driving and …
Monolithic GaN-based driver and GaN switch with diode-emulated GaN technique for 50-MHz operation and sub-0.2-ns deadtime control
TW Wang, YY Kao, SH Hung, YH Wen… - IEEE Journal of Solid …, 2022 - ieeexplore.ieee.org
In this article, the proposed monolithic gallium nitride (GaN)-based driver uses the diode-
emulated technique to reduce reverse conduction through a meta-stable fast (MSF) …
emulated technique to reduce reverse conduction through a meta-stable fast (MSF) …
Dead time optimization in a GaN-based buck converter
M Asad, AK Singha, RMS Rao - IEEE Transactions on Power …, 2021 - ieeexplore.ieee.org
A gallium nitride (GaN) field effect transistor can provide superior performance over a Si-
mosfet due to its low on-state resistance and low junction capacitances. However, a GaN …
mosfet due to its low on-state resistance and low junction capacitances. However, a GaN …
A monolithic GaN-based driver and GaN power HEMT with diode-emulated GaN technique for 50MHz operation and sub-0.2 ns deadtime control
YY Kao, TW Wang, SH Hung, YH Wen… - … Solid-State Circuits …, 2022 - ieeexplore.ieee.org
Monolithic gallium-nitride (GaN) high-electron-mobility transistors (HEMTs) have become
popular due to their low parasitic capacitance, low on-resistance (R ON), and no reverse …
popular due to their low parasitic capacitance, low on-resistance (R ON), and no reverse …
GaN-on-Si: Monolithically Integrated All-GaN Drivers for High-Voltage DC-DC Power Conversion
C Hsia, DF Lu - Applied Sciences, 2022 - mdpi.com
Featured Application High-efficiency and fast power switches with low-latency driver stages
have been demonstrated using GaN HEMTs on Si. Through this monolithic integration …
have been demonstrated using GaN HEMTs on Si. Through this monolithic integration …
A 50-V 50-MHz high-noise-immunity capacitive-coupled level shifter with digital noise blanker for GaN drivers
Y Qin, X Ming, Z Lin, Z Ye, J Shi… - … on Circuits and …, 2023 - ieeexplore.ieee.org
In this paper, a high-noise-immunity capacitive-coupled level shifter with digital noise
blanker (DNB) is presented for GaN drivers. During and after/dt transitions, the DNB blanks …
blanker (DNB) is presented for GaN drivers. During and after/dt transitions, the DNB blanks …
On-chip HV bootstrap gate driving for GaN compatible power circuits operating above 10 MHz
With superb device characteristics, gallium nitride (GaN) power transistors facilitate fast and
efficient power conversion and delivery in modern power circuits. To take full advantage of …
efficient power conversion and delivery in modern power circuits. To take full advantage of …
A 27 W Wireless Power Transceiver With Compact Single-Stage Regulated Class-E Architecture and Adaptive ZVS Control
This work presents a reconfigurable single-stage regulated Class-E (SSRE) wireless power
transceiver that delivers 27 W for wireless charging at 6.78 MHz. The power stage of the …
transceiver that delivers 27 W for wireless charging at 6.78 MHz. The power stage of the …
A 24-V-Input Highly Integrated Interleaved-Inductor Multiple Step-Down Hybrid DC–DC Converter With Inherent Current Equalization Characteristics
This article presents a highly integrated hybrid dc–dc converter with a 24-V input, employing
the interleaved-inductor multiple step-down (IL-MSD) topology. The proposed design …
the interleaved-inductor multiple step-down (IL-MSD) topology. The proposed design …