An unconventional hybrid variable capacitor with a 2-d electron gas

P Dianat, R Prusak, A Persano, A Cola… - … on Electron Devices, 2013 - ieeexplore.ieee.org
Moderation of internal quantum mechanical energies, such as exchange energy of an
unconventional contact, comprised of a system of 2-D charge carriers, improves …

[图书][B] Carrier transport in high-speed photodetectors based on two-dimensional-gas

X Zhao - 2006 - researchdiscovery.drexel.edu
Carrier transport in high-speed photodetectors based on two-dimensional-gas Page 1
Carrier transport in high-speed photodetectors based on two-dimensional-gas Zhao, Xia …

Modelagem compacta para transistores MOS: nanofios sem junções e canais bidimensionais

AM Souza - 2024 - teses.usp.br
â Diante da iminente saturação da Lei de Moore, a comunidade acadêmica se empenha na
exploração de alternativas ao MOSFET convencional de silício, seja inovando nos …

I–V characteristics of Schottky contacts based on quantum wires

R Ragi, MA Romero - Microelectronics journal, 2006 - Elsevier
In this paper we derive the I–V characteristics of Schottky contacts based on bulk metal to
semiconductor quantum wires interfaces. The obtained results show that quantum …

Low dimensionality electronic devices based on heterodimensional Schottky contacts: Modeling and experimental results

MA Romero, R Ragi, B Nabet - 2008 Argentine School of Micro …, 2008 - ieeexplore.ieee.org
This paper discusses the modeling and experimental results for a new family of electronic
devices in which a Schottky metal is placed in direct contact to a low dimensionality structure …

Spin and charge transport in a gated two dimensional electron gas

AI Lerescu - 2007 - research.rug.nl
The work presented in this thesis is centered around the idea of how one can inject,
transport and detect the electron's spin in a two dimensional electron gas (a semiconductor …

[引用][C] l—V characteristics of Schottky contacts based on quantum wires

RRMA Romero