This paper reviews the design of watt-level integrated CMOS RF power amplifiers (PAs) and
state-of-the-art results in the literature. To reach watt-level output power from a single-chip …

A fully integrated switched-capacitor power amplifier (SCPA) utilizes switched-capacitor
techniques in an EER/Polar architecture. It operates on the envelope of a nonconstant …

A 2.4 GHz outphasing power amplifier (PA) is implemented in a 32 nm CMOS process. An
inverter-based class-D PA topology is utilized to obtain low output impedance and good …

Millimeter wave (mmWave) CMOS power amplifiers (PAs) have traditionally been limited in
output power due to the low breakdown voltage of scaled CMOS technologies and poor …

This paper presents a Class-D outphasing RF Power Amplifier (PA) which can operate at a
5.5 V supply and deliver+ 32dBm at 1.85 GHz in a standard 130nm CMOS technology. The …

This paper presents a direct model structure for describing class-D outphasing power
amplifiers (PAs) and a method for digitally predistorting these amplifiers. The direct model …

This paper presents the design and analysis of a low-power Class-D stage in 90 nm CMOS
featuring a harmonic suppression technique, which cancels the 3rd harmonic by shaping the …

This brief presents a behavioral model structure and a model-based phase-only
predistortion method that are suitable for outphasing RF amplifiers. The predistortion method …

This paper reports a fully integrated Doherty power amplifier in standard 90 nm CMOS
technology for 2.4 GHz WLAN applications. An asymmetrical series combining transformer is …

As CMOS technology continues to scale for SoC applications, significant challenges to
implement a monolithic linear high-power amplifier have emerged. This results from the low …