Si–Ge–Sn alloys: From growth to applications
In this review article, we address key material parameters as well as the fabrication and
application of crystalline GeSn binary and SiGeSn ternary alloys. Here, the transition from an …
application of crystalline GeSn binary and SiGeSn ternary alloys. Here, the transition from an …
Recent progress in GeSn growth and GeSn-based photonic devices
J Zheng, Z Liu, C Xue, C Li, Y Zuo… - Journal of …, 2018 - iopscience.iop.org
The GeSn binary alloy is a new group IV material that exhibits a direct bandgap when the Sn
content exceeds 6%. It shows great potential for laser use in optoelectronic integration …
content exceeds 6%. It shows great potential for laser use in optoelectronic integration …
Demonstration of a Ge/GeSn/Ge quantum-well microdisk resonator on silicon: enabling high-quality Ge (Sn) materials for micro-and nanophotonics
We theoretically study and experimentally demonstrate a pseudomorphic Ge/Ge0. 92Sn0.
08/Ge quantum-well microdisk resonator on Ge/Si (001) as a route toward a compact GeSn …
08/Ge quantum-well microdisk resonator on Ge/Si (001) as a route toward a compact GeSn …
Progress on germanium–tin nanoscale alloys
Group IV alloys have attracted interest in the drive to create Si compatible, direct band gap
materials for implementation in complementary metal oxide semiconductor (CMOS) and …
materials for implementation in complementary metal oxide semiconductor (CMOS) and …
Highly Selective Dry Etching of Germanium over Germanium–Tin (Ge1–xSnx): A Novel Route for Ge1–xSnx Nanostructure Fabrication
We present a new etch chemistry that enables highly selective dry etching of germanium
over its alloy with tin (Ge1–x Sn x). We address the challenges in synthesis of high-quality …
over its alloy with tin (Ge1–x Sn x). We address the challenges in synthesis of high-quality …
GeSn Waveguide Photodetectors with Vertical p–i–n Heterostructure for Integrated Photonics in the 2 μm Wavelength Band
The 2 μm wavelength band (1800–2100 nm) emerges as a promising candidate for next‐
generation optical communication. As a result, silicon photonic platforms acquire great …
generation optical communication. As a result, silicon photonic platforms acquire great …
GeSn quantum well p-channel tunneling FETs fabricated on Si (001) and (111) with improved subthreshold swing
Ultrathin GeSn channels were epitaxially grown on Si (111) and (001) substrates using solid
source molecular beam epitaxy. Well-behaved GeSn quantum well (QW) pTFETs and …
source molecular beam epitaxy. Well-behaved GeSn quantum well (QW) pTFETs and …
Silicon-based silicon–germanium–tin heterostructure photonics
R Soref - Philosophical Transactions of the Royal Society …, 2014 - royalsocietypublishing.org
The wavelength range that extends from 1550 to 5000 nm is a new regime of operation for
Si-based photonic and opto-electronic integrated circuits. To actualize the new chips …
Si-based photonic and opto-electronic integrated circuits. To actualize the new chips …
New materials for post-Si computing: Ge and GeSn devices
As Si-transistor technology advances beyond the 10 nm node, the device research
community is increasingly looking into the possibility of replacing Si with novel, high mobility …
community is increasingly looking into the possibility of replacing Si with novel, high mobility …
Impact of strain engineering and Sn content on GeSn heterostructured nanomaterials for nanoelectronics and photonic devices
MA Nawwar, MSA Ghazala, LMS El-Deen… - RSC …, 2022 - pubs.rsc.org
Heterostructures based on the GeSn nanocompound have high impact on integrated
photonics devices. The promising feature of GeSn nanostructures is its direct bandgap …
photonics devices. The promising feature of GeSn nanostructures is its direct bandgap …