We study the evolution of lattice defects in single-crystal ZnO bombarded with 60-keV 28 Si
and 300-keV 197 Au ions at 77 and 300 K. To characterize ion-beam-produced structural …

Recently, there has been much interest in wide band-gap wurtzite semiconductors such as
group-III nitrides (GaN, AlGaN, and InGaN) and ZnO. Ion-beam-defect processes are …

We study the evolution of structural defects in Al x Ga 1− x N films (with x= 0.0–0.6)
bombarded with kilo-electron-volt heavy ions at 77 and 300 K. We use a combination of …

To investigate the reason for the reduction in damage resistance of In x Ga 1− x N with
increasing indium (In) content, we used molecular dynamics methods to simulate the …

We study structural disorder in ZnO bombarded at room temperature with 1.3 keV∕ amu
atomic P and cluster PF n (⁠ n= 2 and 4) ions. Rutherford backscattering/channeling …

Wurtzite GaN films bombarded with 40 keV C ions to high doses (⁠ 5× 10 17 and 1× 10 18
cm− 2⁠) are studied by a combination of Rutherford backscattering/channeling …

A method of statistical calculation of parameters of averaged individual collision cascades
formed by cluster ions composed of a small number of atoms is suggested. The results of …

We present the results of investigation of radiation damage accumulation in GaN during its
sequential co-implantation with fluorine ions of two different energies. This process is proved …

Multiple-energy Si+ implantation in the range 30–360 keV into Al 0.13 Ga 0.87 N for n-type
doping was carried out at room temperature, followed by annealing at 1150–1375 C for 5 …

Si+ ion implantation at a total dose of 1.0× 10 15 cm− 2 and multiple ion energies in the
range of 30–190 keV into Al 0.13 Ga 0.87 N layers on sapphire substrates for n-type doping …