Micro‐light emitting diode: from chips to applications
Typical light‐emitting diodes (LEDs) have a form factor>(300× 300) µm2. Such LEDs are
commercially mature in illumination and ultralarge displays. However, recent LED research …
commercially mature in illumination and ultralarge displays. However, recent LED research …
Reversal of Band-Ordering Leads to High Hole Mobility in Strained p-type Scandium Nitride
Low hole mobility of nitride semiconductors is a significant impediment to realizing their high-
efficiency device applications. Scandium nitride (ScN), an emerging rocksalt indirect band …
efficiency device applications. Scandium nitride (ScN), an emerging rocksalt indirect band …
A review on GaN-based two-terminal devices grown on Si substrates
Gallium nitride (GaN) based two-terminal devices, such as Schottky barrier diodes (SBDs),
pin diodes and light-emitting diodes (LEDs) are essential components for power conversion …
pin diodes and light-emitting diodes (LEDs) are essential components for power conversion …
Monolithically integrated UVC AlGaN-based multiple quantum wells structure and photonic chips for solar-blind communications
R He, N Liu, Y Gao, R Chen, S Zhang, H Yuan, Y Duo… - Nano Energy, 2022 - Elsevier
High quality AlGaN material growth and chip fabrication of monolithically integrated solar
blind light-emitting diodes (LEDs), waveguides and photodetectors (PDs) on an AlGaN multi …
blind light-emitting diodes (LEDs), waveguides and photodetectors (PDs) on an AlGaN multi …
Analysis of channel length, gate length and gate position optimization of III-Nitride/β-Ga2O3 Nano-HEMT for high-power nanoelectronics and terahertz applications
This research article reports the investigation of performance optimization of the field-plated
and recessed gate III-Nitride nano-HEMT on β-Ga 2 O 3 substrate. The optimization is done …
and recessed gate III-Nitride nano-HEMT on β-Ga 2 O 3 substrate. The optimization is done …
Monolithic integration of III-nitride voltage-controlled light emitters with dual-wavelength photodiodes by selective-area epitaxy
We report for the first time on-chip integration of III-nitride voltage-controlled light emitters
with visible and ultraviolet (UV) photodiodes (PDs). InGaN/GaN and AlGaN/GaN …
with visible and ultraviolet (UV) photodiodes (PDs). InGaN/GaN and AlGaN/GaN …
Voltage-controlled GaN HEMT-LED devices as fast-switching and dimmable light emitters
This letter reports a novel voltage-controlled light emitter with fast switching speed and
dimming capability using a monolithically integrated GaN HEMT-LED device. The integrated …
dimming capability using a monolithically integrated GaN HEMT-LED device. The integrated …
Multichannel Visible Light Communication over a Single Optical Path
J Fu, K Fu, Z Ye, B Wang, X Gao, J Yan, Z Qi… - ACS …, 2023 - ACS Publications
Multiple-quantum-well (MQW) diodes have a variety of light emission, transmission,
modulation, and detection functions. In particular, they feature an emission-detection …
modulation, and detection functions. In particular, they feature an emission-detection …
Monolithic integrated all-GaN-based µLED display by selective area regrowth
Y Liu, Z Liu, KM Lau - Optics Express, 2023 - opg.optica.org
This work demonstrates an all-GaN-based µLED display with monolithic integrated HEMT
and µLED pixels using the selective area regrowth method. The monochrome µLED-HEMT …
and µLED pixels using the selective area regrowth method. The monochrome µLED-HEMT …
Uniting GaN electronics and photonics on a single chip
J Yan, L Wang, B Jia, Z Ye, H Zhu, HW Choi… - Journal of Lightwave …, 2021 - opg.optica.org
The bandgap energies of the group III-V semiconductor gallium nitride (GaN) and its alloys
cover emission wavelengths ranging from the ultraviolet to the visible. Concurrently, GaN …
cover emission wavelengths ranging from the ultraviolet to the visible. Concurrently, GaN …