Variable range hopping conductivity and negative magnetoresistance in n-type InP semiconductor
R Abdia, A El Kaaouachi, A Nafidi, G Biskupski… - Solid-state …, 2009 - Elsevier
The low temperature electrical conductivity behaviour of the n-type InP sample in the
insulating regime of the metal–insulator transition is studied in magnetic fields. A negative …
insulating regime of the metal–insulator transition is studied in magnetic fields. A negative …
Nonlinear transport and localization in single-walled carbon nanotubes
MS Fuhrer, W Holmes, PL Richards, P Delaney… - Synthetic Metals, 1999 - Elsevier
We have measured the electrical transport properties of mats of single-walled carbon
nanotubes (SWNT) as a function of applied electric and magnetic fields. We find that at low …
nanotubes (SWNT) as a function of applied electric and magnetic fields. We find that at low …
Mott type variable range hopping conduction and magnetoresistance in p-type CuIn3Te5 semiconductor compound
Variable range hopping (VRH) conduction of Mott type for a constant and non-vanishing
density of states at the Fermi level is observed over a wide range of temperature between 45 …
density of states at the Fermi level is observed over a wide range of temperature between 45 …
Electrical transport mechanism of the amorphous phase in Cr2Ge2Te6 phase change material
Abstract A Cr 2 Ge 2 Te 6 (CrGT) phase change material (PCM) was studied. Different from
conventional PCMs, it shows an inverse resistance change between a low-resistance …
conventional PCMs, it shows an inverse resistance change between a low-resistance …
Variable-range hopping conductivity and magnetoresistance in
KG Lisunov, E Arushanov, GA Thomas… - Journal of Applied …, 2000 - pubs.aip.org
The low-temperature charge transport in n-CuGaSe 2 was investigated in zero and nonzero
magnetic field. Both the Mott as well as the Shklovskii–Efros regimes of the variable-range …
magnetic field. Both the Mott as well as the Shklovskii–Efros regimes of the variable-range …
Efros-Shklovskii type variable range hopping conduction and magnetoresistance in p-type CuGa3Te5
Variable range hopping conduction of Efros and Shklovskii type when a Coulomb gap
appears at the Fermi level due to repulsive interaction of the holes, is observed in two …
appears at the Fermi level due to repulsive interaction of the holes, is observed in two …
Influence of scattering and interference effects on the low-temperature magnetotransport of Cu2ZnSnS4 single crystals
E Lähderanta, M Guc, MA Shakhov… - Journal of Applied …, 2016 - pubs.aip.org
Activated resistivity, ρ (T), and positive magnetoresistance (MR) are observed in Cu 2 ZnSnS
4 single crystals within the temperature interval between T∼ 2 and 300 K in pulsed …
4 single crystals within the temperature interval between T∼ 2 and 300 K in pulsed …
Effect of impurity band conduction on the electrical characteristics of n-type
The Hall effect and electrical resistivity of n-type CuInSe 2 single crystals are measured
between 4.2 and 300 K. Using a single conduction band model, the variation of the electron …
between 4.2 and 300 K. Using a single conduction band model, the variation of the electron …
[HTML][HTML] Mixed-conduction mechanism of Cr2Ge2Te6 film enabling positive temperature dependence of electrical conductivity and seebeck coefficient
S Hatayama, T Yagi, Y Sutou - Results in Materials, 2020 - Elsevier
Abstract A Cr 2 Ge 2 Te 6 (CrGT) film is known to be a phase change material showing low-
energy phase change between amorphous and crystalline phases. A crystalline Cr 2 Ge 2 …
energy phase change between amorphous and crystalline phases. A crystalline Cr 2 Ge 2 …
Electrical Properties of the Ordered Defect Compound CuIn3Se5
The electrical properties of n and p‐type bulk samples of CuIn3Se5 have been studied in the
temperature range from 80 to 300 K. From the analysis of the temperature dependence of …
temperature range from 80 to 300 K. From the analysis of the temperature dependence of …