High-frequency power converters enabled by wide bandgap (WBG) and silicon
semiconductor devices offer distinct advantages in power density and dynamic performance …

Development of power electronic converters tend to achieve high efficiency and at the same
time high power density in many industrial applications. In recent years, with emerging third …

The first generation of wireless power transfer (WPT) standard Qi, launched in 2010,
contains a wide range of transmitter and receiver designs with the aim of maximizing …

Recently, the full-bridge (FB) LLC resonant converter is getting more attention due to its zero-
voltage switching of the primary switches, zero-current switching of rectifier diodes, and high …

For determining the dynamic ON-resistance R dyn, on of a power transistor, the voltage and
current waveforms have to be measured during the switching operation. The novel …

This paper deals with a new resonant gate-drive circuit for power MOSFETs. The proposed
gate-drive circuit is characterized by a resonant inductor connected in series with the gate …

Soft switching for both primary and secondary side devices is available by using LLC
converters. This resonant converter is an ideal candidate for today's high frequency, high …

This article presents a novel current-source gate driver for Silicon Carbide (SiC) metal oxide
semiconductor field-effect transistors (mosfets) with adaptive functionalities. The proposed …

Silicon carbide (SiC) and gallium nitride metal-oxide-semiconductor field-effect transistors
(MOSFETs) are capable of processing high power at high switching frequencies with less …

In this paper, we explore the challenges of implementing resonant converters using silicon
carbide (SiC) power devices at high frequency: namely, the issue of high parasitic …