Recent advances in ultraviolet photodetectors

Z Alaie, SM Nejad, MH Yousefi - Materials Science in Semiconductor …, 2015 - Elsevier
In recent years, ultraviolet (UV) photodetectors (PDs) have received much attention in the
various field of research due to wide range of industrial, military, biological and …

A highly responsive self‐driven UV photodetector using GaN nanoflowers

N Aggarwal, S Krishna, A Sharma… - Advanced electronic …, 2017 - Wiley Online Library
The rising demand for optoelectronic devices to be operable in adverse environments
necessitates the sensing of ultraviolet (UV) radiation. Here, a self‐driven, highly sensitive …

Polarization assisted self-powered GaN-based UV photodetector with high responsivity

J Wang, C Chu, K Tian, J Che, H Shao, Y Zhang… - Photonics …, 2021 - opg.optica.org
In this work, a self-powered GaN-based metal-semiconductor-metal photodetector (MSM
PD) with high responsivity has been proposed and fabricated. The proposed MSM PD forms …

ReS2 Nanosheet/WS2 Nanosheet/p-GaN Substrate Dual Junction Photodetectors

Q Zheng, Z Qiu, Q Zhang, M Yang, J Lei… - ACS Applied Nano …, 2023 - ACS Publications
The broad application of ultraviolet (UV) photodetectors in civil, astronomical, and military
fields has sparked significant research interest. Recently, two-dimensional layered transition …

Broadband Photodetector for Ultraviolet to Visible Wavelengths Based on the BA2PbI4/GaN Heterostructure

J Guo, B Ye, Y Gu, Y Liu, X Yang, F Xie… - … Applied Materials & …, 2023 - ACS Publications
Two-dimensional (2D) organic–inorganic hybrid perovskites (OIPs) have exhibited ideal
prospects for perovskite photodetectors (PDs) owing to their remarkable environmental …

Enhanced photoresponsivity in Bi2Se3 decorated GaN nanowall network-based photodetectors

V Aggarwal, S Gautam, A Yadav, R Kumar… - Materials Research …, 2024 - Elsevier
Recently, highly responsive photodetectors which are capable of photodetection in a wide
range of wavelength spectra are in great demand. To fulfil this, photodetectors formed using …

Polarization assisted interdigital AlGaN/GaN heterostructure ultraviolet photodetectors

J Guo, Y Gu, Y Liu, F Liang, W Chen… - … on Electron Devices, 2023 - ieeexplore.ieee.org
An ultraviolet (UV) photodetector (PD) applying the two-dimensional electron gas (2DEG) at
the AlGaN/GaN interface with AlGaN symmetrical interdigital structure is designed. The …

GaN/Si based single SAW resonator temperature sensor operating in the GHz frequency range

A Müller, G Konstantinidis, V Buiculescu… - Sensors and Actuators A …, 2014 - Elsevier
The paper presents the manufacturing and characterization of GaN based SAW (surface
acoustic wave) type temperature sensors. In contrast with most SAW sensor structures …

Porous-shaped silicon carbide ultraviolet photodetectors on porous silicon substrates

N Naderi, MR Hashim - Journal of Alloys and Compounds, 2013 - Elsevier
A metal–semiconductor-metal (MSM) ultraviolet photodetector was fabricated based on a
porous-shaped structure of silicon carbide (SiC). For increasing the surface roughness of …

Carrier transport across PtSe2/n-type GaN heterojunction

V Janardhanam, JH Kim, I Jyothi, MS Kang, SK Lee… - Vacuum, 2023 - Elsevier
We fabricated PtSe 2/n-type GaN heterojunction diode by transferring a large-scale grown
two-dimensional (2D) PtSe 2 layered film onto a 3D GaN substrate. The PtSe 2 film …