With the use of UV‐C radiation sterilizers on the rise in the wake of the recent pandemic, it
has become imperative to have health safety systems in place to curb the ill‐effects on …

ABSTRACT Gallium oxide (Ga2O3) is an emerging wide bandgap semiconductor that has
attracted a large amount of interest due to its ultra-large bandgap of 4.8 eV, a high …

Liquid metals and their derivatives provide several opportunities for fundamental and
practical exploration worldwide. However, the increasing number of studies and shortage of …

Rapid progress in β-gallium oxide (β-Ga 2 O 3) material and device technologies has been
made in this decade, and its superior material properties based on the very large bandgap …

Ga2O3 is attractive for power devices and solar-blind ultraviolet photodetectors due to its
ultra-wide bandgap, large breakdown field, and favorable stability. However, it is difficult to …

With projected performance advantages over silicon and incumbent wide-bandgap
compound semiconductors, gallium oxide (Ga 2 O 3) has garnered worldwide attention as …

A review is given of reported trap states in the bandgaps of different polymorphs of the
emerging ultrawide bandgap semiconductor Ga 2 O 3. The commonly observed defect …

As an ultrawide bandgap semiconductor, gallium oxide (Ga 2 O 3) has superior physical
properties and has been an emerging candidate in the applications of power electronics and …

Gallium oxide, and in particular its thermodynamically stable β-Ga 2 O 3 phase, is within the
most exciting materials in research and technology nowadays due to its unique properties …

This work explores the luminescence properties of self-trapped holes and impurity-related
acceptors using one-dimensional configuration coordinate diagrams derived from hybrid …