III-nitride deep ultraviolet (DUV) light-emitting diodes (LEDs) have been identified as
promising candidates for energy-efficient, environment-friendly and robust UV lighting …

In recent years, a novel epitaxial method based on Quasi-van der Waals (QvdW) force to
epitaxy three-dimensional (3D) nitride semiconductors on two-dimensional (2D) materials …

For the [0001] oriented AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs), the
holes in the p-type electron blocking layer (p-EBL) are depleted due to the polarization …

This work reports a nearly efficiency-droop-free AlGaN-based deep ultraviolet light-emitting
diode (DUV LED) emitting in the peak wavelength of 270 nm. The DUV LED utilizes a …

AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs) have great application
prospects in sterilization, UV phototherapy, biological monitoring and other aspects. Due to …

It is well known that the p-type AlGaN electron blocking layer (p-EBL) can block hole
injection for deep ultraviolet light-emitting diodes (DUV LEDs). The polarization induced …

In this work, a self-powered GaN-based metal-semiconductor-metal photodetector (MSM
PD) with high responsivity has been proposed and fabricated. The proposed MSM PD forms …

High-density dislocations in materials and poor electrical conductivity of p-type AlGaN layers
constrain the performance of the ultraviolet light emitting diodes and lasers at shorter …

AlGaN solar-blind ultraviolet detectors have great potential in many fields, although their
performance has not fully meet the requirements until now. Here, we proposed an approach …

Aluminum-rich p-AlGaN electron blocking layers (EBLs) are typically used for preventing
overflow of electrons from the active region in AlGaN-based deep ultraviolet (DUV) laser …