[HTML][HTML] Growth of β-Ga2O3 and ϵ/κ-Ga2O3 on AlN (0001) by molecular-beam epitaxy
S Raghuvansy, JP McCandless, M Schowalter, A Karg… - APL Materials, 2023 - pubs.aip.org
The heteroepitaxial growth and phase formation of Ga 2 O 3 on Al-polar AlN (0001)
templates by molecular-beam epitaxy (MBE) are studied. Three different MBE approaches …
templates by molecular-beam epitaxy (MBE) are studied. Three different MBE approaches …
Molecular Beam Epitaxy of β-(InxGa1–x)2O3 on β-Ga2O3 (010): Compositional Control, Layer Quality, Anisotropic Strain Relaxation, and Prospects for Two …
P Mazzolini, C Wouters, M Albrecht… - … Applied Materials & …, 2024 - ACS Publications
In this work, we investigate the growth of monoclinic β-(In x Ga1–x) 2O3 alloys on top of
(010) β-Ga2O3 substrates via plasma-assisted molecular beam epitaxy. In particular, using …
(010) β-Ga2O3 substrates via plasma-assisted molecular beam epitaxy. In particular, using …
[HTML][HTML] Growth, catalysis, and faceting of α-Ga2O3 and α-(InxGa1− x) 2O3 on m-plane α-Al2O3 by molecular beam epitaxy
MS Williams, M Alonso-Orts, M Schowalter, A Karg… - APL Materials, 2024 - pubs.aip.org
The growth of α-Ga2O3 and α-(InxGa1− x) 2O3 on m-plane α-Al2O3 (10 10) by molecular
beam epitaxy (MBE) and metal-oxide-catalyzed epitaxy (MOCATAXY) is investigated. By …
beam epitaxy (MBE) and metal-oxide-catalyzed epitaxy (MOCATAXY) is investigated. By …
[HTML][HTML] Structural characterization of threading dislocation in α-Ga2O3 thin films on c-and m-plane sapphire substrates
H Takane, S Konishi, Y Hayasaka, R Ota… - Journal of Applied …, 2024 - pubs.aip.org
We discuss the structure of threading dislocations in α-Ga 2 O 3 thin films grown on c-and m-
plane sapphire substrates. The thickness-dependent threading dislocation density in both …
plane sapphire substrates. The thickness-dependent threading dislocation density in both …
[HTML][HTML] Growth of α-Ga2O3 from Gallium Acetylacetonate under HCl Support by Mist Chemical Vapor Deposition
T Yasuoka, L Liu, GT Dang, T Kawaharamura - Nanomaterials, 2024 - ncbi.nlm.nih.gov
Abstract α-Ga 2 O 3 films were grown on a c-plane sapphire substrate by HCl-supported mist
chemical vapor deposition with multiple solution chambers, and the effect of HCl support on …
chemical vapor deposition with multiple solution chambers, and the effect of HCl support on …
Phase-selective growth of - vs -GaO and (InGa)O by In-mediated metal exchange catalysis in plasma-assisted molecular beam epitaxy
A Ardenghi, O Bierwagen, J Lähnemann, J Kler… - arXiv preprint arXiv …, 2023 - arxiv.org
Its piezo-and potentially ferroelectric properties make the metastable kappa polymorph of Ga
$ _2 $ O $ _3 $ an interesting material for multiple applications, while In-incorporation into …
$ _2 $ O $ _3 $ an interesting material for multiple applications, while In-incorporation into …