This paper furnishes a Comprehensive study about an emerging GaN HEMT technology
suitable for RF and high power applications. It plays a vital role in Wireless communication …

In this article, we review recent progress on AlGaN/GaN and InAlN/GaN metal-insulator-
semiconductor high-electron-mobility transistors (MIS-HEMTs) using Al-based oxides, nitride …

The implementation of 5G-and-beyond networks requires faster, high-performance, and
power-efficient semiconductor devices, which are only possible with materials that can …

GaN electronics constitutes a revolutionary technology with power handling capabilities that
amply exceed those of Si and other semiconductors in many applications. RF, microwave …

In this article, we demonstrate normally-OFF p-GaN gate high electron mobility transistors
(HEMTs) on Si with an ultrahigh breakdown voltage () and excellent saturation drain current …

We demonstrate the first GaN vertical transistor on silicon, based on a 6.7--thick npn
heterostructure grown on 6-inch silicon substrate by metal organic chemical-vapor …

The alkaline earth stannates are touted for their wide band gaps and the highest room-
temperature electron mobilities among all of the perovskite oxides. CaSnO3 has the highest …

Three different insulator layers SiNx, SiON, and SiO2 were used as a gate dielectric and
passivation layer in AlGaN/GaN metal–insulator–semiconductor high-electron-mobility …

In this work, the effect of in situ SiNx grown with different carrier gas on the structural and
electrical properties of the SiNx/AlGaN/GaN MIS-HEMTs is studied. It was found that the …

Normally-off AlGaN/GaN MIS-HEMTs with a high threshold voltage () more than 2.5 V and a
low on-resistance of mm have been achieved by an improved regrowth technique with in …