Size-dependent capacitance study on InGaN-based micro-light-emitting diodes

W Yang, S Zhang, JJD McKendry… - Journal of Applied …, 2014 - pubs.aip.org
We report a detailed study on size-dependent capacitance, especially the negative
capacitance (NC), in InGaN-based micro-pixelated light-emitting diodes (μLEDs). Similar to …

Revealing the negative capacitance effect in silicon quantum dot light-emitting diodes via temperature-dependent capacitance-voltage characterization

J Mock, M Kallergi, E Groß, M Golibrzuch… - IEEE Photonics …, 2022 - ieeexplore.ieee.org
In this study, quantum dot light-emitting diodes based on non-toxic silicon quantum dots
functionalized with hexyl and dodecyl organic ligands showed a negative capacitance effect …

A source of negative capacitance in organic electronic devices observed by impedance spectroscopy: Self-heating effects

H Okumoto, T Tsutsui - Applied Physics Express, 2014 - iopscience.iop.org
Self-heating effects in organic electronic devices are investigated by impedance
spectroscopy (IS). A temperature modulation of the admittance couples the gigantic …

Size effect on negative capacitance at forward bias in InGaN/GaN multiple quantum well-based blue LED

EM Bourim, JI Han - Electronic Materials Letters, 2016 - Springer
Abstract Size effect of InGaN/GaN multiple quantum well (MQW) blue light emitting diodes
(LEDs), on electrical characteristics in forward bias voltage at high injection current in light …

Negative activation energy and dielectric signatures of excitons and excitonic Mott transitions in quantum confined laser structures

A Bhunia, K Bansal, M Henini… - Journal of Applied …, 2016 - pubs.aip.org
Mostly, optical spectroscopies are used to investigate the physics of excitons, whereas their
electrical evidences are hardly explored. Here, we examined a forward bias activated …

Negative capacitance switching via VO2 band gap engineering driven by electric field

X He, J Xu, X Xu, C Gu, F Chen, B Wu, C Wang… - Applied Physics …, 2015 - pubs.aip.org
We report the negative capacitance behavior of an energy band gap modulation quantum
well with a sandwich VO2 layer structure. The phase transition is probed by measuring its …

Temperature‐dependent ac current‐voltage‐capacitance characteristics of GaN‐based light‐emitting diodes under high forward bias

W Yang, D Li, J He, C Wang, X Hu - physica status solidi (c), 2014 - Wiley Online Library
Temperature‐dependent ac current‐voltage‐capacitance characteristics between 90 K and
440 K were investigated for InGaN/GaN multi‐quantum‐wells blue light‐emitting diodes …

Dynamics of electronic transitions and frequency dependence of negative capacitance in semiconductor diodes under high forward bias

K Bansal, M Henini, MS Alshammari, S Datta - Applied Physics Letters, 2014 - pubs.aip.org
We observed qualitatively dissimilar frequency dependence of negative capacitance under
high charge injection in two sets of functionally different junction diodes: III-V based light …

Impact of trap states on inductive phenomena in 30% InGaN/GaN MQW LED devices

K Bozkurt, O Özdemir, NA Kuruoğlu… - Journal of Physics D …, 2019 - iopscience.iop.org
Investigation of structural quality (by x-ray diffraction) and analysis of defects and interfaces
in epitaxial layers (by transmission electron microscopy (TEM)) have been performed on …

On the relationship between electrical and electro-optical characteristics of InAs/InP quantum dot lasers

V Mikhelashvili, O Eyal, I Khanonkin… - Journal of Applied …, 2018 - pubs.aip.org
This paper addresses the electrical and electro-optical characteristics of InAs/InP quantum
dot (QD) laser diodes operating under continuous wave in the temperature range of 285 K to …