Development of hafnium based high-k materials—A review
The move to implement metal oxide based gate dielectrics in a metal-oxide-semiconductor
field effect transistor is considered one of the most dramatic advances in materials science …
field effect transistor is considered one of the most dramatic advances in materials science …
'Old Chemistries' for new applications: Perspectives for development of precursors for MOCVD and ALD applications
A Devi - Coordination chemistry reviews, 2013 - Elsevier
The concept of the transformation of molecules to materials has been well established in the
field of chemical vapor deposition (CVD) and atomic layer deposition (ALD). However …
field of chemical vapor deposition (CVD) and atomic layer deposition (ALD). However …
Hafnium oxide thin film grown by ALD: An XPS study
Hafnium (IV) oxide thin films were synthesized by atomic layer deposition (ALD) on Si (100)
substrates, using an innovative guanidinate-stabilized hafnium amide precursor,[Hf (NEtMe) …
substrates, using an innovative guanidinate-stabilized hafnium amide precursor,[Hf (NEtMe) …
Multiferroic thin-film integration onto semiconductor devices
R Thomas, JF Scott, DN Bose… - Journal of Physics …, 2010 - iopscience.iop.org
This review deals with thin films of single-phase materials which exhibit two primary ferroic
properties, namely ferroelectricity and (anti) ferromagnetism, deposited directly or through …
properties, namely ferroelectricity and (anti) ferromagnetism, deposited directly or through …
Impact of the precursor chemistry and process conditions on the cell-to-cell variability in 1T-1R based HfO2 RRAM devices
Abstract The Resistive RAM (RRAM) technology is currently in a level of maturity that calls
for its integration into CMOS compatible memory arrays. This CMOS integration requires a …
for its integration into CMOS compatible memory arrays. This CMOS integration requires a …
Synthesis, characterization, and thermal properties of homoleptic rare-earth guanidinates: promising precursors for MOCVD and ALD of rare-earth oxide thin films
Eight novel homoleptic tris-guanidinato complexes M [(N i Pr) 2CNR2] 3 [M= Y (a), Gd (b),
Dy (c) and R= Me (1), Et (2), i Pr (3)] have been synthesized and characterized by NMR …
Dy (c) and R= Me (1), Et (2), i Pr (3)] have been synthesized and characterized by NMR …
Stabilization of amide-based complexes of niobium and tantalum using malonates as chelating ligands: Precursor chemistry and thin film deposition
The stabilization of the reactive amide complexes of niobium and tantalum with malonates
as chelating ligands leads to stable six-coordinated monomeric complexes ([M (NMe2) 4 …
as chelating ligands leads to stable six-coordinated monomeric complexes ([M (NMe2) 4 …
Heteroleptic Guanidinate‐ and Amidinate‐Based Complexes of Hafnium as New Precursors for MOCVD of HfO2
The synthesis and characterization of four new heteroleptic complexes [Hf {η2‐(iPrN)
2CNMe2} 2Cl2](1),[Hf {η2‐(iPrN) 2CNMe2} 2Me2](2),[Hf {η2‐(iPrN) 2CMe} 2Cl2](3), and [Hf …
2CNMe2} 2Cl2](1),[Hf {η2‐(iPrN) 2CNMe2} 2Me2](2),[Hf {η2‐(iPrN) 2CMe} 2Cl2](3), and [Hf …
Liquid Injection MOCVD of Dysprosium Scandate Films: Deposition Characteristics and High-Applications
R Thomas, P Ehrhart, M Roeckerath… - Journal of The …, 2007 - iopscience.iop.org
Crystalline,, and amorphous high-thin films have been deposited on substrates by
metallorganic chemical vapor deposition (MOCVD) using two metal precursors [M= Dy, Sc; …
metallorganic chemical vapor deposition (MOCVD) using two metal precursors [M= Dy, Sc; …
Investigation of atomic vapour deposited TiN/HfO2/SiO2 gate stacks for MOSFET devices
C Wenger, M Lukosius, I Costina, R Sorge… - Microelectronic …, 2008 - Elsevier
HfO2 films were grown by atomic vapour deposition (AVD) on SiO2/Si (100) substrates. The
positive shift of the flat band voltage of the HfO2 based metal-oxide-silicon (MOS) devices …
positive shift of the flat band voltage of the HfO2 based metal-oxide-silicon (MOS) devices …