Reverse side engineered III-nitride devices
Group III-nitride devices are described that include a stack of III-nitride layers, passivation
layers, and conductive contacts. The stack includes a channel layer with a 2DEG channel, a …
layers, and conductive contacts. The stack includes a channel layer with a 2DEG channel, a …
Semiconductor devices with field plates
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Gallium nitride diodes and integrated components
CS Suh, J Honea, U Mishra - US Patent App. 11/856,695, 2009 - Google Patents
(57) ABSTRACT A diode device can include an enhancement mode gallium nitride
transistor having a gate, a drain and a source, wherein the gate is connected to the drain to …
transistor having a gate, a drain and a source, wherein the gate is connected to the drain to …
Semiconductor heterostructure diodes
Planar Schottky diodes for which the semiconductor material includes a heterojunction
which induces a 2DEG in at least one of the semiconductor layers. A metal anode contact is …
which induces a 2DEG in at least one of the semiconductor layers. A metal anode contact is …
Semiconductor devices with guard rings
U Mishra, S Chowdhury, Y Dora - US Patent 8,901,604, 2014 - Google Patents
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High power semiconductor electronic components with increased reliability
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Electrode configurations for semiconductor devices
Y Dora, Y Wu - US Patent 8,716,141, 2014 - Google Patents
Abstract A III-N semiconductor device can include an electrode-defining layer having a
thickness on a surface of a III-N material structure. The electrode-defining layer has a recess …
thickness on a surface of a III-N material structure. The electrode-defining layer has a recess …
Enhancement-mode III-nitride devices
RK Lal - US Patent 9,087,718, 2015 - Google Patents
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JP 2010-087076 4/2010 7,875,907 B2 1/2011 Honea et al. JP 2010-539712 12/2010 …
JP 2010-087076 4/2010 7,875,907 B2 1/2011 Honea et al. JP 2010-539712 12/2010 …
GaN structures
DM Kinzer - US Patent 9,960,154, 2018 - Google Patents
(57) ABSTRACT A semiconductor device is disclosed. The device includes a substrate
including Gan, a two dimensional electron gas (2DEG) inducing layer on the substrate, and …
including Gan, a two dimensional electron gas (2DEG) inducing layer on the substrate, and …